Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells
Georg Knebl,P. Pfeffer,S. Schmid,Martin Kamp,Gérald Bastard,E. Batke,L. Worschech,Fabian Hartmann,Sven Höfling,Sven Höfling +9 more
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In this paper, the authors studied the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its type-II broken band alignment and inverted band structure.Abstract:
We study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its type-II broken band alignment and inverted band structure. Under constant optical excitation, the majority charge carrier type switches from electron to hole. Within the majority charge carrier type transition, the coexisting minority charge carrier contribution indicates electron-hole hybridization with a nontrivial topological insulating phase. The optical tuning is attributed to the negative photoconductivity of antimonide materials in combination with a persistent charge carrier buildup of photogenerated charges at the surface and substrate side of the device, respectively. Our study of the tuning of an InAs/GaSb double quantum well heterostructure reveals that an electro-optical switching is possible and paves the way to an optical control of the phase diagram of InAs/GaSb topological insulators.read more
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이은일 ( Eun Il Lee ),신유철 ( You Choel Shin ),이주현 ( Joo Hyun Lee ),김순덕 ( Soon Duck Kim ),김해준 ( Hae Joon Kim ),조무성 ( Moo Sung Jo ) +5 more
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Journal ArticleDOI
Massless Dirac fermions in III-V semiconductor quantum wells
Sergey S. Krishtopenko,Wilfried Desrat,K. E. Spirin,Christophe Consejo,Sandra Ruffenach,F. Gonzalez-Posada,Benoit Jouault,Wojciech Knap,K. V. Maremyanin,Vladimir I. Gavrilenko,Guilhem Boissier,Jeremie Torres,M. Zaknoune,Eric Tournié,Frederic Teppe +14 more
TL;DR: In this paper, a gated Hall bar made on a three-layer InAs/GaSb/InAs quantum well was used to restore the Landau level fan chart by magnetotransport and unequivocally demonstrate a gapless state in their sample.
Journal ArticleDOI
p-type doped AlAsSb/GaSb resonant tunneling diode photodetector for the mid-infrared spectral region
Andreas Pfenning,Fabian Hartmann,Robert Weih,Monika Emmerling,Lukas Worschech,Sven Höfling,Sven Höfling +6 more
TL;DR: In this article, the authors are grateful for financial support from the State of Bavaria, the German Ministry of Education and Research (BMBF), via the national project HIRT (Grant No. FKZ 13XP5003B).
DissertationDOI
Experimental and theoretical determination of the transport properties of n-AlxGa1-xSb/GaSb
TL;DR: In this paper, the authors report on the design, growth, fabrication, measurement and analysis of n-GaSb/Al0.2Ga0.8Sb heterostructures.
Proceedings ArticleDOI
Mid-infrared detectors based on resonant tunneling diodes and interband cascade structures
Andreas Pfenning,Georg Knebl,Anne Schade,Robert Weih,Andreas Bader,Manuel Meyer,Sebastian Krüger,Florian Rothmayr,C. Kistner,Johannes Koeth,Martin Kamp,Fabian Hartmann,Lukas Worschech,Sven Höfling +13 more
TL;DR: In this article, a GaSb/InAs-based detector for mid-infrared (MIR) light sources is proposed, based on resonant tunneling diode (RTD) photodetectors.
References
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Journal ArticleDOI
Colloquium: Topological insulators
M. Z. Hasan,Charles L. Kane +1 more
TL;DR: In this paper, the theoretical foundation for topological insulators and superconductors is reviewed and recent experiments are described in which the signatures of topologically insulators have been observed.
Journal ArticleDOI
Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
TL;DR: In this article, the quantum spin Hall (QSH) effect can be realized in mercury-cadmium telluride semiconductor quantum wells, a state of matter with topological properties distinct from those of conventional insulators.
Journal ArticleDOI
Z-2 Topological Order and the Quantum Spin Hall Effect
Charles L. Kane,Eugene J. Mele +1 more
TL;DR: The Z2 order of the QSH phase is established in the two band model of graphene and a generalization of the formalism applicable to multiband and interacting systems is proposed.
Journal ArticleDOI
Quantum Spin Hall Insulator State in HgTe Quantum Wells
Markus König,Steffen Wiedmann,Steffen Wiedmann,Christoph Brüne,Christoph Brüne,Andreas Roth,Andreas Roth,Hartmut Buhmann,Hartmut Buhmann,Laurens W. Molenkamp,Laurens W. Molenkamp,Xiao-Liang Qi,Xiao-Liang Qi,Shou-Cheng Zhang,Shou-Cheng Zhang +14 more
TL;DR: The quantum phase transition at the critical thickness, d = 6.3 nanometers, was independently determined from the magnetic field–induced insulator-to-metal transition, providing experimental evidence of the quantum spin Hall effect.
Quantum Spin Hall Insulator State in HgTe Quantum Wells
Markus König,Steffen Wiedmann,Steffen Wiedmann,Christoph Brüne,Christoph Brüne,Andreas Roth,Andreas Roth,Hartmut Buhmann,Hartmut Buhmann,Laurens W. Molenkamp,Laurens W. Molenkamp,Xiao-Liang Qi,Xiao-Liang Qi,Shou-Cheng Zhang,Shou-Cheng Zhang +14 more
TL;DR: In this article, the quantum spin Hall effect was observed in HgTe/(Hg,Cd)Te quantum wells with well width d 6.3 nanometers and the residual conductance was independent of sample width, indicating that it is caused by edge states.