Journal ArticleDOI
p-Channel, n-Channel Thin Film Transistors and p−n Diodes Based on Single Wall Carbon Nanotube Networks
Yangxin Zhou,Anshu Gaur,Seung Hyun Hur,Coskun Kocabas,Matthew Meitl,Moonsub Shim,John A. Rogers +6 more
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TLDR
In this paper, the authors demonstrate the use of arrays of networks of single wall carbon nanotubes (SWNTs) and electrical breakdown procedures for building thin film transistors (TFTs) that have good, reproducible performance and high current output.Abstract:
This paper demonstrates the use of arrays of networks of single wall carbon nanotubes (SWNTs) and electrical breakdown procedures for building thin film transistors (TFTs) that have good, reproducible performance and high current output. Channel length scaling analysis of these TFTs indicates that the resistance at the source/drain contacts is a small fraction of the device resistance, in the linear regime. When measured with the channel exposed to air or coated by poly(methyl methacrylate) (PMMA), these transistors operate in the unipolar p mode. By spin-coating the polymer polyethylenimine (PEI) on the channel region, these transistors can be switched to operate in the unipolar n mode. Patterning the exposure of a single channel to PMMA and PEI yields p -n diodes. These results indicate that SWNT-TFTs can provide the building blocks of complex complementary circuits for a range of applications in macroelectronics, sensors, and other systems.read more
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疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.
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PatentDOI
Stretchable form of single crystal silicon for high performance electronics on rubber substrates
TL;DR: In this article, the authors present stretchable and printable semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed, or otherwise deformed.
PatentDOI
Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp
Ralph G. Nuzzo,John A. Rogers,Etienne Menard,Keon Jae Lee,Dahl-Young Khang,Yugang Sun,Matthew Meitl,Zhengtao Zhu +7 more
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Journal ArticleDOI
High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes
Seong Jun Kang,Coskun Kocabas,Taner Ozel,Moonsub Shim,N. Pimparkar,Muhammad A. Alam,Slava V. Rotkin,John A. Rogers +7 more
TL;DR: Dense, perfectly aligned arrays of long, perfectly linear SWNTs are reported as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices, representing a route to large-scale integrated nanotube electronics.
References
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疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A
TL;DR: PfPMP1）与感染红细胞、树突状组胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作�ly.
Journal ArticleDOI
Room-temperature transistor based on a single carbon nanotube
TL;DR: In this paper, the fabrication of a three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics and has attracted much interest, particularly because it could lead to new miniaturization strategies in the electronics and computer industry.
Journal ArticleDOI
Percolation and Conduction
TL;DR: In this article, an extension of percolation theory to treat transport is described, and a general expression for the conductance of such networks is derived, which relates to the spin-stiffness coefficient of dilute ferromagnet.
Book
Semiconductor Devices: Physics and Technology
TL;DR: In this paper, the transmission coefficient of a symmetric resonance tunneling diode has been derived for a Symmetric Resonant-Tunneling Diode, and it has been shown that it can be computed in terms of the Density of States in Semiconductor.
Journal ArticleDOI
Ballistic carbon nanotube field-effect transistors
TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.