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Journal ArticleDOI

Piezo-Phototronic Effect in a Quantum Well Structure.

TLDR
In this study, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics and its validity and universality are well-proven.
Abstract
With enhancements in the performance of optoelectronic devices, the field of piezo-phototronics has attracted much attention, and several theoretical works have been reported based on semiclassical models. At present, the feature size of optoelectronic devices are rapidly shrinking toward several tens of nanometers, which results in the quantum confinement effect. Starting from the basic piezoelectricity equation, Schrodinger equation, Poisson equation, and Fermi’s golden rule, a self-consistent theoretical model is proposed to study the piezo-phototronic effect in the framework of perturbation theory in quantum mechanics. The validity and universality of this model are well-proven with photoluminescence measurements in a single GaN/InGaN quantum well and multiple GaN/InGaN quantum wells. This study provides important insight into the working principle of nanoscale piezo-phototronic devices as well as guidance for the future device design.

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Citations
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Journal ArticleDOI

Enhanced Solar Cell Conversion Efficiency of InGaN/GaN Multiple Quantum Wells by Piezo-Phototronic Effect

TL;DR: This research not only theoretically and experimentally proves the piezo-phototronic effect modulated the quantum photovoltaic device but also provides a great promise to maximize the use of solar energy in the current energy revolution.
Journal ArticleDOI

Highly enhanced performance of integrated piezo photo-transistor with dual inverted OLED gate and nanowire array channel

TL;DR: In this article, a dual piezo photo-transistor (DPPT) based on piezo invert-structured organic light emitting diode (OLED) as gate control and piezo nanowires (NWs) array as charge transport channel to realize tunable photoelectric properties dramatic enhancement achieved by piezo-phototronic effect in both stimulation gate electrode and the metal-semiconductor-metal channel.
Journal ArticleDOI

Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect

TL;DR: A significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect is demonstrated and theoretically confirmed as the physical mechanisms.
Journal ArticleDOI

Piezo-phototronic effect improved performance of n-ZnO nano-arrays/p-Cu2O film based pressure sensor synthesized on flexible Cu foil

TL;DR: In this paper, a compact sensitivity controllable pressure sensor with the n -ZnO nano-arrays/p-Cu 2 O film structure is synthesized on flexible Cu foil substrate, and the improved performance due to piezo-phototronic effect is characterized systematically.
References
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Journal ArticleDOI

Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays

TL;DR: This approach has the potential of converting mechanical, vibrational, and/or hydraulic energy into electricity for powering nanodevices.
Journal ArticleDOI

Nanobelts of Semiconducting Oxides

TL;DR: The beltlike morphology appears to be a distinctive and common structural characteristic for the family of semiconducting oxides with cations of different valence states and materials of distinct crystallographic structures, which could be an ideal system for fully understanding dimensionally confined transport phenomena in functional oxides.
Journal ArticleDOI

Spontaneous polarization and piezoelectric constants of III-V nitrides

TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI

Electronics based on two-dimensional materials

TL;DR: A review of electronic devices based on two-dimensional materials, outlining their potential as a technological option beyond scaled complementary metal-oxide-semiconductor switches and the performance limits and advantages, when exploited for both digital and analog applications.
Journal ArticleDOI

Band parameters for nitrogen-containing semiconductors

TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
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