Journal ArticleDOI
Point defects induced work function modulation of β-Ga2O3
Bhera Ram Tak,Sheetal Dewan,Anshu Goyal,Ravi Pathak,Vinay Gupta,Ashok K. Kapoor,S. Nagarajan,R.K. Singh +7 more
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TLDR
In this article, the effect of point defects such as vacancies and interstitials on the work function of β-Ga2O3 thin films grown by pulsed laser deposition was investigated.About:
This article is published in Applied Surface Science.The article was published on 2019-01-28. It has received 62 citations till now. The article focuses on the topics: Kelvin probe force microscope & Fermi level.read more
Citations
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Defect engineering in photocatalysis: formation, chemistry, optoelectronics, and interface studies
TL;DR: In this paper, a review of defect engineering in photocatalytic materials is comprehensively discussed with a focus on the classification, formation, and characterization of defects and their roles in photochemical systems.
Journal ArticleDOI
High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors
Bhera Ram Tak,Manjari Garg,Sheetal Dewan,Carlos G. Torres-Castanedo,Kuang-Hui Li,Vinay Gupta,Xiaohang Li,Rajendra Singh +7 more
TL;DR: In this paper, high-temperature operation of metal-semiconductor-metal (MSM) UV photodetectors fabricated on pulsed laser deposited β-Ga2O3 thin films has been investigated.
Journal ArticleDOI
High-Temperature Photocurrent Mechanism of \b{eta}-Ga2O3 Based MSM Solar-Blind Photodetectors.
Bhera Ram Tak,Manjari Garg,Sheetal Dewan,Carlos G. Torres-Castanedo,Kuang-Hui Li,Vinay Gupta,Xiaohang Li,R. K. Singh +7 more
TL;DR: In this article, the photo current to dark current (PDCR) ratio of about 7100 was observed at room temperature (RT) while it had a value 2.3 at 250 °C at 10 V applied bias.
Journal ArticleDOI
Recent advances in the growth of gallium oxide thin films employing various growth techniques- A review
Bhera Ram Tak,Sudheer Kumar,Ashok Kumar Kapoor,Danhao Wang,Xiaohang Li,Haiding Sun,Rajendra Singh +6 more
TL;DR: In this article, the authors provide an overview of the current understanding of epitaxial growth of different phases of Ga2O3 by various growth techniques including pulsed laser deposition (PLD), molecular beam epitaxy (MBE), metal-organic chemical vapour deposition (MOCVD), sputtering, mist chemical vapours deposition (Mist CVD), and atomic layer deposition (ALD).
Journal ArticleDOI
Wearable Gallium Oxide Solar-Blind Photodetectors on Muscovite Mica Having Ultrahigh Photoresponsivity and Detectivity with Added High-Temperature Functionalities
TL;DR: In this article, a wearable gallium oxide solar-blind photodetector fabricated on muscovite mica is reported for room-temperature as well as hightemperature operations.
References
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Journal ArticleDOI
An Ultrahigh Responsivity (9.7 mA W −1 ) Self‐Powered Solar‐Blind Photodetector Based on Individual ZnO–Ga 2 O 3 Heterostructures
TL;DR: In this article, a self-powered solar-blind photodetector with a sharp cutoff wavelength at 266 nm was constructed by a simple one-step chemical vapor deposition method, and showed an ultrahigh responsivity (9.7 mA W−1) at 251 nm with a high UV/visible rejection ratio (R251 nm/R400 nm) of 6.9 × 102 under zero bias.
Journal ArticleDOI
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki,Kohei Sasaki,Takafumi Kamimura,Man Hoi Wong,Daivasigamani Krishnamurthy,Akito Kuramata,Takekazu Masui,S. Yamakoshi +7 more
TL;DR: In this article, single-crystal gallium oxide (Ga2O3) metal-oxide-semiconductor field effect transistors were fabricated on a semi-insulating β-Ga 2O3 (010) substrate.
Journal ArticleDOI
Development of gallium oxide power devices
TL;DR: In this paper, an n-type Ga2O3 epitaxial thin films with controllable carrier densities were obtained by ozone molecular beam epitaxy (MBE).
Journal ArticleDOI
Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction
Xing Chen,Kewei Liu,Zhenzhong Zhang,Chunrui Wang,Binghui Li,Haifeng Zhao,Dongxu Zhao,Dezhen Shen +7 more
TL;DR: A Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process and exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm, which is much quicker than any other previously reported β-Ga 2O3-based photodetectors.
Journal ArticleDOI
$\hbox{Ga}_{2} \hbox{O}_{3}$ Schottky Barrier Diodes Fabricated by Using Single-Crystal $\beta$ – $\hbox{Ga}_{2} \hbox{O}_{3}$ (010) Substrates
TL;DR: In this article, the authors fabricated gallium oxide (Ga2O3) Schottky barrier diodes using single-crystal substrates produced by the floating-zone method.