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Preparation and characterization of LaMnO3 thin films grown by pulsed laser deposition

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TLDR
In this article, the authors have grown LaMnO3 thin films on (001) LaAlO3 substrates by pulsed laser deposition X-ray diffraction confirms that the films are only slightly relaxed and are oriented "square on square" relative to the substrate.
Abstract
We have grown LaMnO3 thin films on (001) LaAlO3 substrates by pulsed laser deposition X-ray diffraction confirms that the films are only slightly relaxed and are oriented “square on square” relative to the substrate The measured Raman spectra closely resemble that observed in bulk LaMnO3, which indicates no relevant distortions of the MnO6 octahedra induced by the epitaxial strain Therefore, no detectable changes in the lattice dynamics occurred in our LaMnO3 strained films relative to the bulk case Mn55 nuclear magnetic resonance identifies the presence of localized Mn4+ states Superconducting quantum interference device magnetization measures TN=131(3)K and a saturation moment μ=109μB∕Mn, revealing a small concentration of Mn4+ and placing our films within the antiferromagnetic insulating phase

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Metal-insulator transition and its relation to magnetic structure in (LaMnO3)2n/(SrMnO3)n superlattices.

TL;DR: Measurements of transport, magnetization, and polarized neutron reflectivity reveal that the ferromagnetism is relatively uniform in the metallic state, and is strongly modulated in the insulating state, being high in LaMnO3 and suppressed in SrMmO3.
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Spin and orbital Ti magnetism at LaMnO3/SrTiO3 interfaces

TL;DR: A new kind of Ti(3+) ferromagnetism at LaMnO( 3)/SrTiO(3) epitaxial interfaces is reported, which results from charge transfer to the empty conduction band of the titanate and has spin and orbital contributions evidencing the role of orbital degeneracy.
Journal ArticleDOI

Metal Oxide Nanocomposites: A Perspective from Strain, Defect, and Interface

TL;DR: The remarkable progress achieved in vertically aligned nanocomposite thin films from a perspective of tuning functionalities through control of strain, defect, and interface is summarized.
Journal ArticleDOI

“Charge Leakage” at LaMnO3/SrTiO3 Interfaces

TL;DR: The charge transfer at the interface between a band and a Mott insulator in epitaxial superlattices is reported on to provide a clue to optimize oxide devices such as magnetic tunnel junctions and field effect transistors whose operation is determined by the interface properties.
References
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Journal ArticleDOI

Thousandfold Change in Resistivity in Magnetoresistive La-Ca-Mn-O Films

TL;DR: A negative isotropic magnetoresistance effect has been observed in thin oxide films of perovskite-like La0.67Ca0.33MnOx, which could be useful for various magnetic and electric device applications if the observed effects of material processing are optimized.
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Insulator-metal transition and giant magnetoresistance in La 1-x Sr x MnO 3

TL;DR: Insulator-metal phenomena depending on band filling, temperature, and external magnetic field have been investigated for prototypical double-exchange ferromagnets, namely, crystals of crystals of La 1-x, showing large negative magnetoresistance around the ferromagnetic transition temperature.
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The physics of manganites: Structure and transport

TL;DR: The fundamental physical properties of doped oxides and their underlying physics were known more than 40 years ago as mentioned in this paper, and the concept of double exchange in particular, and points out the missing elements that have led to a massive resurgence of interest in these and related materials.
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Orbital Physics in Transition-Metal Oxides

TL;DR: An overview is given here on this "orbital physics," which will be a key concept for the science and technology of correlated electrons.
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Mixed-valence manganites

TL;DR: A review of the literature on mixed-valence manganites, placing new results in the context of established knowledge of these materials, and other magnetic semiconductors, is given in this paper.
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