Journal ArticleDOI
Properties of nitrogen doped silicon films deposited by low pressure chemical vapour deposition from disilane and ammonia
TLDR
In this article, Nitrogen doped silicon films have been deposited by low pressure chemical vapour deposition from disilane Si 2 H 6 and ammonia NH 3, pointing out the influences of the deposition temperature, the total pressure and the gas flow rates.About:
This article is published in Thin Solid Films.The article was published on 2002-07-01. It has received 22 citations till now. The article focuses on the topics: Plasma-enhanced chemical vapor deposition & Disilane.read more
Citations
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Journal ArticleDOI
Doping and quantum confinement effects in single Si nanocrystals observed by scanning tunneling spectroscopy.
Omri Wolf,Mita Dasog,Zhenyu Yang,I. Balberg,Jonathan G. C. Veinot,Jonathan G. C. Veinot,Oded Millo +6 more
TL;DR: The tunneling spectra measured on NCs functionalized with NH4Br or allylamine show band-edge shifts toward higher energies, akin to p-type doping, which is consistent with the blueshift revealed by photoluminescence from dodecene functionalized Si-NCs.
Patent
Microchannel plate devices with tunable resistive films
Neal T. Sullivan,Anton S. Tremsin,Philippe de Rouffignac,David Beaulieu,Kourosh Saadatmand,Steve Bachman,K. Stenton +6 more
TL;DR: In this article, a microchannel plate for detecting neutrons is proposed, which includes a hydrogen-rich polymer substrate that defines a plurality of channels extending from a top surface of a substrate to a bottom surface of the substrate, where neutrons interact with the plurality to generate at least one secondary electron.
Journal ArticleDOI
Boron diffusion into nitrogen doped silicon films for P+ polysilicon gate structures
TL;DR: In this paper, the boron diffusion in nitrogen doped silicon (NIDOS) deposited from disilane Si 2 H 6 and ammonia NH 3 for the development of P + polysilicon gate metal oxide semiconductor (MOS) devices was investigated.
Journal ArticleDOI
Photoluminescence from silicon nanocrystals embedded in silicon nitride fabricated by low-pressure chemical vapor deposition followed by high-temperature annealing
TL;DR: The photoluminescence from silicon nanocrystals (Si-ncs) embedded in an amorphous silicon nitride matrix was examined both experimentally and through theoretical simulations as mentioned in this paper.
Patent
Current control element, memory element, and fabrication method thereof
TL;DR: In this article, a memory element (3) arranged in matrix in a memory device and including a resistance variable element (1) which switches its electrical resistance value in response to a positive or negative electrical pulse applied to the memory and retains the switched electrical resistance values.
References
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Journal ArticleDOI
The Tension of Metallic Films Deposited by Electrolysis
TL;DR: It is well known that metallic films deposited electrolytically are in many cases liable to peel off if deposited to any considerable thickness as discussed by the authors, especially if it does not adhere very tightly to the body on which it is deposited.
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Recrystallization of amorphous silicon films deposited by low‐pressure chemical vapor deposition from Si2H6 gas
TL;DR: In this article, the authors investigated the recrystallization of low-pressure chemical vapor deposition amorphous silicon (a•Si) films deposited using Si2H6 gas at various substrate temperatures.
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Reliability and integration of ultra-thin gate dielectrics for advanced CMOS
Douglas A. Buchanan,S.-H. Lo +1 more
TL;DR: In this paper, the authors suggest that the future of CMOS down to and below the 0.1 μm gate lengths may well hinge on finding a replacement of silicon dioxide as the gate insulator.
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Degradation of oxynitride gate dielectric reliability due to boron diffusion
TL;DR: In this article, the impact of the suppression of boron diffusion via nitridation of SiO2 on gate oxide integrity and device reliability was investigated using oxynitride gate dielectrics.
Journal ArticleDOI
Optical and structural properties of SiOx and SiNx materials
TL;DR: In this paper, the Clausius-Mossoti theory and Bruggeman expression were used to establish a relation between the refractive index and the stoichiometry of these two materials.