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Journal ArticleDOI

Rapid thermal processing in semiconductor technology

M J Hart, +1 more
- 01 May 1988 - 
- Vol. 3, Iss: 5, pp 421-436
TLDR
A broad overview of the possible applications of Rapid Thermal Processing (RTP) techniques is given in this article, where three main modes of RTP, the adiabatic, thermal flux and isothermal modes, are compared in terms of heat flow, physical processes and suitability for various applications in the field of silicon semiconductor processing.
Abstract
The authors give a broad overview of some of the possible (and actual) applications of rapid thermal processing (RTP) techniques. Pioneering work done in the field of RTP is described, and a large number of references (about 90) are given. Because of the very wide range of possible applications the detail in which each is discussed may not be in direct relation to their importance for commercial or research purposes. The three main modes of RTP, the adiabatic, thermal flux and isothermal modes are described and contrasted in terms of heat flow, physical processes and suitability for various applications in the field of silicon semiconductor processing. The main types of equipment utilised for RTP research studies are briefly described, ranging from pulsed and CW laser and electron beam sources to radiant heat sources such as graphite plate and lamp systems. Three examples of the application of RTP to silicon semiconductor processing are described in some detail, with comparisons to conventional processing techniques made where relevant. The use of isothermal annealing systems for the activation of ion-implanted dopants is described and reviewed. The possible advantages of RTP are given, and the place of such technology in modern CMOS processing are briefly summarised. The formation of silicon-on-insulator structures using RTP techniques is described and compared with the competing technologies of oxygen implantation and porous silicon. Finally, the wide-ranging, new field of in situ multi-stage processing (or limited reaction processing) is briefly described, and possible applications discussed. This final section covers a subject in which much interest at the research level is presently focused.

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Citations
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Journal ArticleDOI

Microporous Silica and Zeolite Membranes for Hydrogen Purification

TL;DR: In this paper, the authors summarized the state of the art, provided relevant definitions, and outlined the base design and long-term specifications of viable supported membrane structures, followed by an overview of transport properties, synthesis, and operational stability of the membrane and the supporting structures.
Journal ArticleDOI

Shallow defects responsible for GR noise in MOSFETs

TL;DR: In this paper, the authors extract defect information from n-channel rapid thermal annealed (RTA) MOSFETs that exhibited a pronounced GR noise, including hole traps at energies 0.26 and 0.42 eV above the valence band.
Journal ArticleDOI

Rapid thermal processing of magnetic materials

TL;DR: In this paper, the history, principles and facilities of several types of Rapid Thermal Processing (RTP) techniques are introduced, including laser and electron beam heating, lamp heating, Joule heating and pulse thermal processing techniques.
Journal ArticleDOI

Iron Oxide Films Prepared by Rapid Thermal Processing for Solar Energy Conversion.

TL;DR: The fast processing enabled by RTP makes this technique a preferred method for investigation of novel materials and architectures, potentially also on nanostructured electrodes, where retaining high surface area is crucial to maximize performance.
References
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Journal ArticleDOI

cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

TL;DR: In this article, a 3.4mm-thick polycrystalline silicon was implanted with B to a dose of 5×1014/cm2 and irradiated in a cw laser scanning apparatus.
Journal ArticleDOI

A new dielectric isolation method using porous silicon

Kazuo Imai
TL;DR: In this article, a new dielectric isolation technology is proposed based on the following characteristics of the porous silicon oxide formation: (1) p -type Si is more easily changed to porous silicon than n-type Si; (2) porous silicon is formed along the anodic reaction current flow line; (3) the change in volume of porous silicon after oxidation is relatively small; and (4) thick porous silicon films (10 μm) can be obtained easily.
Journal ArticleDOI

Shallow junctions by high‐dose As implants in Si: experiments and modeling

TL;DR: In this article, a computer program was used to simulate the concentration dependent diffusion and As clustering effects in high-dose As implanted Si during moderate temperature (∼800 ° C) heat treatments.
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