Realistic simulation of graphene transistors including non-ideal electrostatics

TLDR: In this paper, a new simulation framework for short channel GFETs is introduced, which includes full device electrostatics and physical mechanisms like band-to-band generation-recombination, realistic contact geometry, generalized diffusion, quantum capacitance, and carrier density dependent velocity saturation (vsat).

Abstract: Graphene is a promising candidate for future electronics such as RF transistors, interconnects and flexible components. The simulation and analysis of graphene transistors (GFETs) has so far relied on two approaches: on one hand, compact modeling is efficient but tends to lack physical details and neglects geometric phenomena such as fringing electric fields. On the other hand, atomistic simulations with non-equilibrium Green's functions (NEGF) rigorously account for quantum effects, but phonon scattering is challenging to incorporate realistically, rendering simulation results which are often difficult to compare with experimental data.Here we introduce a new simulation framework better suited for short channel GFETs, which includes the full device electrostatics and physical mechanisms like band-to-band generation-recombination, realistic contact geometry, generalized diffusion, quantum capacitance, and carrier density dependent velocity saturation (vsat).