Journal ArticleDOI
Resonant localized donor state above the conduction band minimum in InN
L. H. Dmowski,J. A. Plesiewicz,Tadeusz Suski,Hai Lu,William J. Schaff,Masahito Kurouchi,Yasushi Nanishi,Leszek Konczewicz,V. Cimalla,Oliver Ambacher +9 more
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TLDR
In this paper, pressure dependence of Hall electron concentration and mobility in degenerated, not intentionally doped InN samples was studied and a localized donor type state resonant with the conduction band was identified.Abstract:
We have studied the pressure dependence of Hall electron concentration and mobility in degenerated, not intentionally doped InN samples. The results obtained for a whole set of samples with electron concentrations from 5.4×1017cm−3 to 3.3×1018cm−3 consistently reveal the existence of a localized donor type state, resonant with the conduction band. Its energy position is estimated to be about 80–90 meV above the bottom of the conduction band. This donor state is not the only source of electrons in these not intentionally doped samples and can be entirely populated and hidden in samples with very high electron concentrations.read more
Citations
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Journal ArticleDOI
Two-dimensional electronic transport and surface electron accumulation in MoS2.
M. D. Siao,W. C. Shen,Ruei-San Chen,Z. W. Chang,M. C. Shih,Ya Ping Chiu,Ya Ping Chiu,C.-M. Cheng +7 more
TL;DR: It is shown that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source, with a surface electron concentration nearly four orders of magnitude higher than that of MoS2 inner bulk.
Journal ArticleDOI
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
Vadim Lebedev,V. Cimalla,T. Baumann,Oliver Ambacher,Francisco M. Morales,Juan G. Lozano,David González +6 more
TL;DR: In this article, the influence of dislocations on electron transport properties of undoped InN thin films grown by molecular-beam epitaxy on AlN(0001) pseudosubstrates is reported.
Journal ArticleDOI
Surface band bending at nominally undoped and Mg‐doped InN by Auger Electron Spectroscopy
V. Cimalla,M. Niebelschütz,Gernot Ecke,Vadim Lebedev,Oliver Ambacher,Marcel Himmerlich,Stefan Krischok,J. A. Schaefer,Hai Lu,William J. Schaff +9 more
TL;DR: In this paper, the energy shift of the In MNN peak was estimated during the depth profiling in order to obtain information about the position of the Fermi level, while the surface is clearly n-type.
Book ChapterDOI
Electronic Energy Levels in Group-III Nitrides
TL;DR: In this article, the authors reviewed the published information concerning the electronic energy levels created within the valence-band to conduction-band energy gap of crystalline boron nitride, aluminum, gallium, and indium nitride by lattice defects and impurities.
Journal ArticleDOI
Temperature sensitive photoconductivity observed in InN layers
Lei Guo,Xinqiang Wang,Li Feng,Xiantong Zheng,Guang Chen,Xuelin Yang,Fujun Xu,Ning Tang,Li-Wu Lu,Weikun Ge,Bo Shen +10 more
TL;DR: In this paper, an energy band model including a donor state with large lattice relaxation as well as a recombination center is proposed, which explains the experimental observation well, and a negative photoconductivity is observed at room temperature, whereas it gradually changes to be positive with decreasing temperature.
References
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Journal ArticleDOI
Intrinsic electron accumulation at clean InN surfaces.
TL;DR: An intrinsic surface electron accumulation layer is found to exist and is explained in terms of a particularly low Gamma-point conduction band minimum in wurtzite InN, which produces charged donor-type surface states with associated downward band bending.
Journal ArticleDOI
Surface charge accumulation of InN films grown by molecular-beam epitaxy
TL;DR: In this paper, a series of thin InN films down to 10 nm in thickness were prepared by molecular-beam epitaxy on either AlN or GaN buffers under optimized growth conditions.
Journal ArticleDOI
Effects of electron concentration on the optical absorption edge of InN
Junqiao Wu,Wladek Walukiewicz,S. X. Li,R. Armitage,Johnny C. Ho,Eicke R. Weber,Eugene E. Haller,Hai Lu,William J. Schaff,Adam Barcz,Rafal Jakiela +10 more
TL;DR: In this article, the optical absorption edge covers a wide energy range from the intrinsic band gap of InN of about 0.7 to about 1.7 eV which is close to the previously accepted band gap.
Journal ArticleDOI
Origin of electron accumulation at wurtzite InN surfaces
Imran Mahboob,Tim D. Veal,Lfj Piper,Christopher F McConville,Hai Lu,William J. Schaff,Jürgen Furthmüller,Friedhelm Bechstedt +7 more
TL;DR: In this article, the origin of electron accumulation at wurtzite InN surfaces is explained in terms of the bulk band structure, where the branch point energy, which is the crossover point from donor-type to acceptor-type surface states, is located in the conduction band at the $\ensuremath{\Gamma}$-point.
Journal ArticleDOI
Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials
TL;DR: In this article, the effect of the band-gap underestimate in density functional theory was discussed, and the defect electronic structure obtained using DFT was compared with a recently developed self-interaction and relaxation-corrected ~SIRC! pseudopotential treatment.