Journal ArticleDOI
Schottky barrier heights of tantalum oxide, barium strontium titanate, lead titanate, and strontium bismuth tantalate
John Robertson,Chun-Wei Chen +1 more
Reads0
Chats0
TLDR
In this article, the Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate (LZT), and strontia bismuth tantalate have been calculated as a function of the metal work function.Abstract:
The Schottky barrier heights of various metals on the high permitivity oxides tantalum pentoxide, barium strontium titanate, lead zirconate titanate, and strontium bismuth tantalate have been calculated as a function of the metal work function. It is found that these oxides have a dimensionless Schottky barrier pinning factor S of 0.28–0.4 and not close to 1 because S is controlled by Ti–O-type bonds not Sr–O-type bonds, as assumed in earlier work. The band offsets on silicon are asymmetric with a much smaller offset at the conduction band, so that Ta2O5 and barium strontium titanate are relatively poor barriers to electrons on Si.read more
Citations
More filters
Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Journal ArticleDOI
Physics of thin-film ferroelectric oxides
TL;DR: In this article, the authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices.
Journal ArticleDOI
A review of Ga2O3 materials, processing, and devices
Stephen J. Pearton,Jiancheng Yang,Patrick H. Cary,Fan Ren,Jihyun Kim,Marko J. Tadjer,Michael A. Mastro +6 more
TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
Journal ArticleDOI
High dielectric constant gate oxides for metal oxide Si transistors
TL;DR: In this article, a review of the development of high-k gate oxides such as hafnium oxide (HFO) and high-K oxides is presented, with the focus on the work function control in metal gate electrodes.
References
More filters
Book
Metal-semiconductor contacts
TL;DR: In this article, a review of the present knowledge of metal-semiconductor contacts is given, including the factors that determine the height of the Schottky barrier, its current/voltage characteristics, and its capacitance.
Journal ArticleDOI
Fatigue-free ferroelectric capacitors with platinum electrodes
C. A-Paz de Araujo,J. D. Cuchiaro,Larry D. McMillan,Michael C. Scott,James F. Scott,James F. Scott +5 more
TL;DR: In this article, the authors describe the preparation and characterization of thin-film capacitors using ferroelectric materials from a large family of layered perovskite oxides, exemplified by SrBi2Ta2O9, SRBi2NbTaO9 and SrBi4Ta4O15.
Journal ArticleDOI
Surface States and Barrier Height of Metal‐Semiconductor Systems
A. M. Cowley,S. M. Sze +1 more
TL;DR: In this paper, the dependence of the barrier height of metal-semiconductor systems upon the metal work function is derived based on the following assumptions: (1) the contact between the metal and the semiconductor has an interfacial layer of the order of atomic dimensions; it is further assumed that this layer is transparent to electrons with energy greater than the potential barrier but can withstand potential across it.
Journal ArticleDOI
Theory of semiconductor heterojunctions: The role of quantum dipoles
TL;DR: In this paper, a simple criterion for zero-dipole band lineups is proposed, which gives excellent agreement with experimental band lineup, and the close connection between heterojunction band line up and Schottky barrier formation is emphasized.
Journal ArticleDOI
First-principles investigation of ferroelectricity in perovskite compounds
TL;DR: A first-principles ultra-soft-pseudopotential method in conjunction with an efficient preconditioned conjugate-gradient scheme is used to investigate the properties of a series of eight cubic perovskite compounds to predict the symmetry of the ground-state structures of all compounds whose observed low-temperature structure retains a primitive five-atom unit cell.