Journal ArticleDOI
Structural, optical and electrical studies on sol–gel deposited Zr doped ZnO films
TLDR
In this paper, a transparent and conducting films of mixed oxides of zinc and zirconium have been prepared by sol-gel method and the optical bandgap was estimated from the reflectance and transmittance spectra.About:
This article is published in Materials Chemistry and Physics.The article was published on 2003-03-05. It has received 132 citations till now. The article focuses on the topics: Doping & Zirconium.read more
Citations
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Journal ArticleDOI
Al-doped ZnO thin films as methanol sensors
P. P. Sahay,R. K. Nath +1 more
TL;DR: Al-doped zinc oxide (ZnO) thin films were prepared by chemical spray pyrolysis technique and structural analysis of the films revealed that all the films are of polycrystalline zinc oxide in nature, possessing hexagonal wurtzite structure with (0,0,2) preferred orientation.
Journal ArticleDOI
Size‐ and Shape‐Control of Crystalline Zinc Oxide Nanoparticles: A New Organometallic Synthetic Method
TL;DR: In this article, an organometallic synthetic method has been developed for the preparation of crystalline ZnO nanoparticles of controlled size and shape, taking advantage of the exothermic reaction of the precursor Zn(c-C6H11)2 toward moisture and air and involves the presence of longalkyl-chain amines as stabilizing ligands.
Journal ArticleDOI
Direct optical band gap measurement in polycrystalline semiconductors: A critical look at the Tauc method
TL;DR: In this article, a new method was proposed for extracting a direct optical band gap from absorption spectra of degenerately-doped bulk semiconductors, which was applied to pseudo-absorption spectra converted from diffuse-reflectance measurements on bulk specimens.
Journal ArticleDOI
Characteristics of Al-doped ZnO thin films obtained by ultrasonic spray pyrolysis: effects of Al doping and an annealing treatment
Jin-Hong Lee,Byung-Ok Park +1 more
TL;DR: In this article, the effects of Al doping and an annealing treatment on electrical and optical properties of ZnO thin films were investigated, and the optical transmittance of all films was higher than 80% in the visible range.
Journal ArticleDOI
Al-doped zinc oxide thin films for liquid petroleum gas (LPG) sensors
P. P. Sahay,R. K. Nath +1 more
TL;DR: In this article, the dopant concentration (at% Al to Zn) was varied from 0 to 1.5, and the films showed the change in preferential orientation depending on the doping concentration of Al.
References
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Journal ArticleDOI
Optical Properties and Electronic Structure of Amorphous Germanium
Jan Tauc,R. Grigorovici,A. Vancu +2 more
TL;DR: In this article, the optical constants of amorphous Ge were determined for the photon energies from 0.08 to 1.6 eV, and the absorption is due to k-conserving transitions of holes between the valence bands as in p-type crystals.
Journal ArticleDOI
Transparent conductors—A status review
TL;DR: In this paper, the authors present a comprehensive and up-to-date description of the deposition techniques, electro-optical properties, solid state physics of the electron transport and optical effects and some applications of these transparent conductors.
Journal ArticleDOI
Band-gap tailoring of ZnO by means of heavy Al doping
Bo E. Sernelius,Bo E. Sernelius,Karl-Fredrik Berggren,Z.-C. Jin,I. Hamberg,Claes-Göran Granqvist +5 more
TL;DR: Optical band gaps, evaluated from spectrophotometric data, were widened in proportion to the Al doping, and could be quantitatively reconciled with an effective-mass model for n-doped semiconductors, provided the polar character of ZnO was accounted for.
Journal ArticleDOI
Group III Impurity Doped Zinc Oxide Thin Films Prepared by RF Magnetron Sputtering
TL;DR: In this paper, a detailed study of electrical properties in group III impurity doped ZnO thin films prepared by rf magnetron sputtering is described, and it is shown that the resistivity dependence on film thickness below 300 nm.
Book
The Physics of Semiconductor Devices
TL;DR: In this paper, the effects employed in each class of device and derived formulae that describe the measurable voltages and currents are discussed and discussed. But the authors focus on the effects of different types of devices on the physical properties of semiconductors.