Journal ArticleDOI
Study of Nitrogen High-Pressure Annealing on InGaZnO Thin-Film Transistors
Seokhyun Yoon,Young Jun Tak,Doo Hyun Yoon,Uy Hyun Choi,Jin-Seong Park,Byung Du Ahn,Hyun Jae Kim +6 more
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TLDR
Improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy in InGaZnO thin-film transistors.Abstract:
We studied the effects of high-pressure annealing (HPA) on InGaZnO (IGZO) thin-film transistors (TFTs). HPA was proceeded after TFT fabrication as a post process to improve electrical performance and stability. We used N2 as the pressurized gas. The applied pressures were 1 and 3 MPa at 200 °C. For N2 HPA under 3 MPa at 200 °C, field-effect mobility and the threshold voltage shift under a positive bias temperature stress were improved by 3.31 to 8.82 cm2/(V s) and 8.90 to 4.50 V, respectively. The improved electrical performance and stability were due to structural relaxation by HPA, which leads to increased carrier concentration and decreased oxygen vacancy.read more
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Journal ArticleDOI
High-pressure Gas Activation for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors at 100 °C.
TL;DR: High-pressure annealing in nitrogen and oxygen gases was applied to activate amorphous indium-gallium-zinc-oxide (a-IGZO) thin film transistors (TFTs) to reduce the activation temperature from 300 °C to 100’°C via the use of HPA, and the electrical characteristics were superior to those annealed in N2 at 4 MPa, despite the lower pressure.
Journal ArticleDOI
Activation of sputter-processed indium-gallium-zinc oxide films by simultaneous ultraviolet and thermal treatments.
Young Jun Tak,Byung Du Ahn,Sung Pyo Park,Si Joon Kim,Ae Ran Song,Kwun-Bum Chung,Hyun Jae Kim +6 more
TL;DR: Activation of IGZO TFTs using the SUT treatment reduced the processing temperature to 150 °C and improved various electrical performance metrics including mobility, on-off ratio, and threshold voltage shift (positive bias stress for 10,000 s) from 3.81 cm2/Vs, 3.96 × 107 to 1.03 108, and 11.2 to 7.2 V, respectively.
Journal ArticleDOI
Rational Design of ZnO:H/ZnO Bilayer Structure for High-Performance Thin-Film Transistors.
Ablat Abliz,Chun Wei Huang,Jingli Wang,Lei Xu,Lei Liao,Xiangheng Xiao,Wen-Wei Wu,Zhiyong Fan,Changzhong Jiang,Jinchai Li,Shishang Guo,Chuansheng Liu,Tailiang Guo +12 more
TL;DR: This work demonstrates a rational and elegant design of TFT, composed of poly crystalline ZnO:H/ZnO bilayer structure without using other metal elements for doping, suggesting that the bilayer ZnNO: H/ZNO TFTs have a great potential for low-cost thin-film electronics.
Journal ArticleDOI
Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
TL;DR: In this article, the effects of yttrium doping on the electrical performance and stability of ZnO thin film transistors (TFTs) were investigated by using radio frequency magnetron sputtering at 150°C.
Journal ArticleDOI
Analysis of Ultrahigh Apparent Mobility in Oxide Field-Effect Transistors.
Changdong Chen,Bo Ru Yang,Gongtan Li,Hang Zhou,Bolong Huang,Qian Wu,Runze Zhan,Yong-Young Noh,Takeo Minari,Shengdong Zhang,Shaozhi Deng,Henning Sirringhaus,Chuan Liu +12 more
TL;DR: Large-area fabrications and thorough analysis of InGaZnO transistors with enhanced current by simple encapsulations and the use of hydrogens to remarkably enhance performance of oxide transistors by inducing a new mode of device operation are reported.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
TL;DR: The fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO3(ZnO)5, as an electron channel and amorphous hafnium oxide as a gate insulator provides a step toward the realization of transparent electronics for next-generation optoelectronics.
Journal ArticleDOI
Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances
TL;DR: The recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed andp-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed.
Journal ArticleDOI
Improvements in the device characteristics of amorphous indium gallium zinc oxide thin-film transistors by Ar plasma treatment
TL;DR: The effect of Ar plasma treatment on amorphous indium gallium zinc oxide (a-IGZO) thin films was investigated in this paper, where the authors attempted to reduce the contact resistance between the Pt∕Ti (source/drain electrode) and a-IZO (channel).
Journal ArticleDOI
42.2: World's Largest (15‐inch) XGA AMLCD Panel Using IGZO Oxide TFT
Je-Hun Lee,Do-Hyun Kim,Dong Ju Yang,Sun Young Hong,Kap Soo Yoon,Pil Soon Hong,Chang Oh Jeong,Hong Sik Park,Shi Yul Kim,Soon Kwon Lim,Sang Soo Kim,Kyoung Seok Son,Tae Sang Kim,Jang Yeon Kwon,Sang Yoon Lee +14 more
TL;DR: In this paper, the main factors affecting threshold voltage (Vth) of the IGZO thin film transistors (TFTs) are investigated and evaluated with the field effective mobility of 4.2±0.4 cm2/V-s, Vth of −1.3±1.4V and sub-threshold swing (SS) of 0.96± 0.10 V/dec.