Subpicosecond, freely propagating electromagnetic pulse generation and detection using GaAs:As epilayers
A. C. Warren,N. Katzenellenbogen,Daniel R. Grischkowsky,Jerry M. Woodall,Michael R. Melloch,Nobuo Otsuka +5 more
TLDR
Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad-band optoelectronic terahertz beam system, the authors in this paper have generated and detected freely propagating, sub-picosecond electromagnetic pulses.Abstract:
Using GaAs epilayers with arsenic precipitates (GaAs:As) as the photoconductive material in a broad‐band optoelectronic terahertz beam system, we have generated and detected freely propagating, subpicosecond electromagnetic pulses. The receiver signal gave a measured integrated pulse width of 0.71 ps. Fast photoconductive rise times have been achieved which are characteristic of good mobility GaAs. In addition, the material exhibits a short ‘‘effective’’ carrier lifetime of several ps due to the embedded, closely spaced (about 20 nm) arsenic precipitates.read more
Citations
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Exploring dynamics in the far-infrared with terahertz spectroscopy.
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Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs.
TL;DR: Terahertz radiation was generated with several designs of photoconductive antennas fabricated on low-temperature-grown GaAs and semi-insulating GaAs, and the emission properties of the photoc conductive antennas were compared with each other.
Journal ArticleDOI
THz Wave Modulators: A Brief Review on Different Modulation Techniques
TL;DR: In this article, the authors discuss various approaches for electronic, optical, thermal and nonlinear modulation in distinct material systems such as semiconductors, graphene, pho- tonic crystals and metamaterials.
Journal ArticleDOI
Review of terahertz photoconductive antenna technology
TL;DR: The development of THz PCA technology through the last 30 years is reviewed, the key modalities of improving device performance are identified, and literature is reviewed to summarize the progress made in these areas.
Journal ArticleDOI
Nanoscale tera-hertz metal-semiconductor-metal photodetectors
Stephen Y. Chou,M.Y. Liu +1 more
TL;DR: In this article, a high-speed metal-semiconductor-metal photodetectors (MSM PDs) with finger spacing and width as small as 25 nm were fabricated on bulk and low-temperature (LT) grown GaAs and crystalline Si using ultra-high-resolution electron-beam lithography.
References
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Journal ArticleDOI
Picosecond photoconducting Hertzian dipoles
TL;DR: In this article, the generation transmission and detection of extremely rapid electromagnetic pulses have been achieved using fast photoconducting materials as time-varying Hertzian dipoles, which overcomes many of the limitations imposed by transmission line structures, and due to its jitter free behavior and open geometry is ideally suited for transient electromagnetic measurements of materials.
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Characterization of an optoelectronic terahertz beam system
TL;DR: In this article, the performance of an optoelectronic terahertz (THz) beam system was described, where the transmitter operation was based on the repetitive, sub-picosecond laser excitation of a Hertzian dipole antenna embedded in a charged coplanar line.
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Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy
A. C. Warren,Jerry M. Woodall,John L. Freeouf,Daniel R. Grischkowsky,D. T. McInturff,Michael R. Melloch,Nobuo Otsuka +6 more
TL;DR: Arsenic precipitates have been observed in GaAs low-temperature buffer layers (LTBLs) used as "substrates" for normal molecular beam epitaxy growth as mentioned in this paper.
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Subpicosecond electrooptic sampling: Principles and applications
J. A. Valdmanis,Gerard Mourou +1 more
TL;DR: In this article, the principles and applications of electrooptic sampling for the characterization of repetitive ultrafast electrical transients are reviewed and an electric field sensitive technique that utilizes ultrashort optical pulses as "sampling gates" via the Pockels effect is presented.
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Structural properties of As‐rich GaAs grown by molecular beam epitaxy at low temperatures
Maria Kaminska,Zuzanna Liliental-Weber,Eicke R. Weber,Thomas F. George,Jeffrey B. Kortright,F. W. Smith,B.-Y. Tsaur,A. R. Calawa +7 more
TL;DR: In this article, electron paramagnetic resonance (EPR) was used to detect arsenic antisite defects in molecular beam epitaxy (MBE) grown GaAs at substrate temperatures between 200 and 300°C.