Journal ArticleDOI
Theoretical aspects of atomic mixing by ion beams
Peter Sigmund,A. Gras-Marti +1 more
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In this paper, the half-widths of matrix relocation profiles were determined explicitly for ion-impurity knockon events (recoil implantation) as well as isotropic cascade mixing.About:
This article is published in Nuclear Instruments and Methods.The article was published on 1981-04-15. It has received 443 citations till now. The article focuses on the topics: Mixing (physics).read more
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Atomic mixing in the depth-dependent diffusion approximation
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Reliability of the diffusion approximation for the ballistic relocation function in atomic mixing by ion beams
TL;DR: In this article, a simple idealized ballistic relocation function is considered for the case of a single marker layer, where material collectively displaced by recoiling atoms is represented by a Kirkendall drift velocity.
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Ion Mixing of Ni and Pt Layers on Si
TL;DR: In this article, the depth dependence of NiSi atomic mixing induced by 300 keV Xe+ ions was investigated using backscattering spectrometry, and the results showed that the ion mixing process takes place at a depth much greater than that of the ion-induced cascade, even at about −180 °C.
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Ion-beam-induced atomic transport and phase formation in the system nickel/antimony: Part I: Ion-beam mixing of bilayers and markers
TL;DR: In this paper, the ion-beam mixing processes of Sb/Ni marker layers and bilayers under the irradiation of ions ranging from He to Pb, at 80 K and at room temperature, were reported.
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What is the real driving force of bilayer ion beam mixing
P. Süle,M. Menyhárd,Kai Nordlund +2 more
TL;DR: In this paper, the role of hot (energetic) particles in ion beam mixing of bilayers has been investigated and it has been shown that a considerable number of liquid and high energy particles (hot atoms) persist up to even 20ps during a thermal spike.
References
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Handbook of Mathematical Functions
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Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
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The depth resolution of sputter profiling
TL;DR: In this article, it is shown that the bulk radiation damage accompanying sputtering events sets ultimate limits to the depth resolution attainable in sputter profiling, and guidelines for selection of projectile species and energies to minimize such mixing are given and numerical estimates for attainable depth resolutions.