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Theoretical aspects of atomic mixing by ion beams

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TLDR
In this paper, the half-widths of matrix relocation profiles were determined explicitly for ion-impurity knockon events (recoil implantation) as well as isotropic cascade mixing.
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This article is published in Nuclear Instruments and Methods.The article was published on 1981-04-15. It has received 443 citations till now. The article focuses on the topics: Mixing (physics).

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Citations
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A Comparison Between High- and Low-Energy Ion Mixing

TL;DR: In this article, the similarity between high and low-energy ion mixing is the result of the fractal nature of collision cascades, and diffusion in a thermal spike is shown to be the dominant mechanism for both high-and low energy ion mixing.
Journal ArticleDOI

Ion Beam Mixing of Ag/Si Bilayer

TL;DR: In this article, the mixing was initiated by a 400 keV 40 Ar + beam by varying the dose up to 3 × 10 17 ions/cm 2 at constant flux of 0.6 μA/mm 2.
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Understanding ion beam synthesis of nanostructures: Modeling and atomistic simulations

TL;DR: In this article, a kinetic 3D lattice Monte-Carlo model is introduced, which allows for a proper incorporation of collisional mixing and phase separation within supersaturated solid-solutions.
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Transport-theoretical studies of static and dynamic recoil mixing

TL;DR: In this paper, the introduction of ion bombardment of atomic species (“impurities”) into a substrate can be performed in direct (or ion implantation) and indirect modes.
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Collisional mixing in ion beam desorption of impurity monolayers

TL;DR: In this paper, the mixing processes involved in the desorption by ion bombardment of monolayers (adsorbed or deposited) on a substrate were analyzed theoretically and the effect of the surface barrier on the mixed profiles.
References
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Journal ArticleDOI

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
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The depth resolution of sputter profiling

TL;DR: In this article, it is shown that the bulk radiation damage accompanying sputtering events sets ultimate limits to the depth resolution attainable in sputter profiling, and guidelines for selection of projectile species and energies to minimize such mixing are given and numerical estimates for attainable depth resolutions.
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