Journal ArticleDOI
Theoretical aspects of atomic mixing by ion beams
Peter Sigmund,A. Gras-Marti +1 more
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In this paper, the half-widths of matrix relocation profiles were determined explicitly for ion-impurity knockon events (recoil implantation) as well as isotropic cascade mixing.About:
This article is published in Nuclear Instruments and Methods.The article was published on 1981-04-15. It has received 443 citations till now. The article focuses on the topics: Mixing (physics).read more
Citations
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Journal ArticleDOI
The size of thermal spikes in xenon-irradiated Ag/Fe bilayers
TL;DR: In this paper, the diffusion of 111In into the Ag layer can be modeled if the local spikes have an average diameter of some 5 nm, and the fraction of tracer atoms being transported into the ag layer cannot be explained by ballistic mixing, but is reproduced when assuming local spikes to develop.
Journal ArticleDOI
Ion beam mixing of copper-gold multilayers
TL;DR: In this paper, the formation of solid solutions in copper/gold thin multilayers induced by ion implantation has been investigated using Rutherford backscattering, highvoltage electron microscopy and transmission high-energy electron diffraction.
Book ChapterDOI
Ion implantation—A modern tool of solid state physics 0
TL;DR: Ion implantation is very successfully applied in semiconductor physics in combination with heat treatments to produce equilibrium systems as discussed by the authors, however, it is primarily, however, a technique resulting in a nonequilibrium state, especially after low temperature (T < 15 K) implantation.
Journal ArticleDOI
Ion-beam-induced SbSi mixing
TL;DR: Firsov et al. as discussed by the authors investigated the effect of film thickness on mixing by varying the antimony film thickness in the range 50-200 A and the results were compared with those obtained using a computer simulation model based on the MARLOWE code and using a Thomas-Fermi potential with a screening length suggested by Firsov.
Journal ArticleDOI
Mixing in Au/Ge system induced by Ar + ion irradiation
TL;DR: In this paper, the mixing of Au/Ge bilayer deposited onto glass substrate induced by Ar ions was investigated by bombarding the sample with 400-keV 40Ar+ beam with a fluence up to 1.2×1017 ions/cm2 at a constant flux of 0.25μA/cm 2.
References
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Journal ArticleDOI
Handbook of Mathematical Functions
Journal ArticleDOI
Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets
TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Journal ArticleDOI
The depth resolution of sputter profiling
TL;DR: In this article, it is shown that the bulk radiation damage accompanying sputtering events sets ultimate limits to the depth resolution attainable in sputter profiling, and guidelines for selection of projectile species and energies to minimize such mixing are given and numerical estimates for attainable depth resolutions.