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Journal ArticleDOI

Theoretical aspects of atomic mixing by ion beams

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TLDR
In this paper, the half-widths of matrix relocation profiles were determined explicitly for ion-impurity knockon events (recoil implantation) as well as isotropic cascade mixing.
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This article is published in Nuclear Instruments and Methods.The article was published on 1981-04-15. It has received 443 citations till now. The article focuses on the topics: Mixing (physics).

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Journal ArticleDOI

Ion Beam Mixing Effects in Cu/Au Multilayered Thin Films

TL;DR: In this article, the formation of Cu/Au solid solutions is discussed on basis of thermodynamie and kinetic effects in dependence on initial composition and implantation dose, and the results of analysis of the structures are represented briefly.
Journal ArticleDOI

Ion-beam-induced atomic mixing of the metallic system TiNi

TL;DR: In this paper, the role played by a thin layer of co-evaporated amorphous NiTi in the mixing behavior as a function of dose was analyzed in terms of effective diffusion coefficients, diffusion lengths and mixing efficiency.
Journal ArticleDOI

Analysis of Experiments in Helium Microbeam Mixing

TL;DR: In this article, the authors investigated ion-beam mixing in bilayer targets irradiated by 2-MeV He+ microbeams at room temperature and found that the interface width in Cu/Al (1) is proportional to the square root of dose, at constant dose rate, (2) is larger in Al than in Cu, for the same dose, and (3) is absent at liquid nitrogen temperature.
Book ChapterDOI

Combined applications of ion implantation and sims to study the influence of dopants on the growth of oxide films

TL;DR: Experiments combining ion implantation, thermogravimetry, oxidations in atmospheres enriched with 18O, and SIMS analysis, provide interesting results on the influence of trace additions (C, S, Si, Y) on growth mechanisms of NiO and Cr2O3 films as mentioned in this paper.
References
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Journal ArticleDOI

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
Journal ArticleDOI

The depth resolution of sputter profiling

TL;DR: In this article, it is shown that the bulk radiation damage accompanying sputtering events sets ultimate limits to the depth resolution attainable in sputter profiling, and guidelines for selection of projectile species and energies to minimize such mixing are given and numerical estimates for attainable depth resolutions.
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