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Theoretical aspects of atomic mixing by ion beams

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TLDR
In this paper, the half-widths of matrix relocation profiles were determined explicitly for ion-impurity knockon events (recoil implantation) as well as isotropic cascade mixing.
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This article is published in Nuclear Instruments and Methods.The article was published on 1981-04-15. It has received 443 citations till now. The article focuses on the topics: Mixing (physics).

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Citations
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Mixing of Cr and Si atoms induced by noble gas ions irradiation of Cr/Si bilayers

TL;DR: In this article, the atomic mixing induced at the Cr-Si interface as function of the incident ion mass and fluence was investigated and the experimental data were well reproduced by the thermal spikes model.
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Radiation Induced Grain Growth in Transition Metals

TL;DR: In this paper, Ni, Co, Cr, V, and Ti were irradiated with 600 keV Xe ions at liquid nitrogen temperature and the resulting grain growth was measured by transmission electron microscopy.
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Ion beam mixing of Pt marker layers in Al

TL;DR: In this paper, the authors studied the ion beam mixing of Pt marker layers which were 1 nm thick and buried 55 nm deep in Al. The experimental mixing efficiency of η = 0.856(24) nm5/keV is about ten times as high as was to be expected from the ballistic model and the local spike models.
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Mixing and silicide formation during Xe-ion beam irradiations of Ta/Si bilayers

TL;DR: In this paper, thin Ta layers were irradiated with 475 keV Xe + ions to fluences of (0.5-2) × 10 16 ions/cm 2 at temperatures between room temperature and 400 °C.
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Dependence of the ion beam mixing rate in Pd/Al bilayers on the density of deposited energy and temperature

TL;DR: In this paper, the mixing rate dependence with fluence, density of energy deposited through nuclear collisions, as well as temperature dependence are studied, in terms of theoretical models including thermal spike diffusion, chemical driving forces and radiation-enhanced diffusion processes.
References
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Journal ArticleDOI

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
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The depth resolution of sputter profiling

TL;DR: In this article, it is shown that the bulk radiation damage accompanying sputtering events sets ultimate limits to the depth resolution attainable in sputter profiling, and guidelines for selection of projectile species and energies to minimize such mixing are given and numerical estimates for attainable depth resolutions.
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