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Theoretical aspects of atomic mixing by ion beams

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TLDR
In this paper, the half-widths of matrix relocation profiles were determined explicitly for ion-impurity knockon events (recoil implantation) as well as isotropic cascade mixing.
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This article is published in Nuclear Instruments and Methods.The article was published on 1981-04-15. It has received 443 citations till now. The article focuses on the topics: Mixing (physics).

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Xenon and argon irradiation of TiN films on Al-3wt.%Mg

TL;DR: In this article, the effects of surface sputtering, interface mixing and segregation of the mixing ions at the interface were derived from Rutherford-backscattering spectra taken at 900 keV α particle energy.
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Modification of Cr2N coatings on Al-3wt.%Mg substrates by xenon irradiation

TL;DR: In this article, the surface and interface modifications of magnetron-sputtered Cr 2 N films on Al-3wt.%Mg substrates after xenon irradiation were investigated by means of the ion beam analysis techniques of Rutherford-backscattering spectrometry and resonant nuclear reaction analysis.
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Bulk atomic relocation in low-energy collision cascades in silicon: Molecular Dynamics versus Monte Carlo simulations

TL;DR: In this paper, the atomic mixing produced in the bulk of a zero-temperature silicon target by internally-starting low-energy (100 eV) self-recoils is investigated.
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Growth mechanism and magnetic properties of AlMn metastable phase formed by ion beam mixing

TL;DR: In this paper, the growth mechanism of the metastable τ phase with ferromagnetism was investigated for the Al-Mn system and it was revealed that the residual diffusive motion induced by a collision cascade is the decisive factor for metastable phase formation.
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Synthesis of Ti–Cr–N thin films by reactive ion-beam mixing of Ti/Cr interfaces

TL;DR: In this paper, the ion-beam mixing (IBM) has been analyzed using X-ray photoelectron spectroscopy (XPS), angle-resolved Xray photo-electron spectrum (ARXPS) and Monte Carlo TRIDYN simulations, showing that the composition of the ternary films formed by reactive IBM is rather uniform in the near surface region.
References
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Journal ArticleDOI

Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets

TL;DR: In this article, an integrodifferential equation for the sputtering yield is developed from the general Boltzmann transport equation, and solutions of the integral equation are given that are asymptotically exact in the limit of high ion energy as compared to atomic binding energies.
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The depth resolution of sputter profiling

TL;DR: In this article, it is shown that the bulk radiation damage accompanying sputtering events sets ultimate limits to the depth resolution attainable in sputter profiling, and guidelines for selection of projectile species and energies to minimize such mixing are given and numerical estimates for attainable depth resolutions.
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