Journal ArticleDOI
Structure and stability of ultrathin zirconium oxide layers on Si(001)
TLDR
In this paper, the structure of ultrathin ZrO2 layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy was examined.Abstract:
We have examined the structure of ultrathin ZrO2 layers on Si(001) using medium energy ion scattering and cross-sectional transmission electron microscopy. Films can be deposited on SiO2 layers with highly abrupt interfaces by atomic layer deposition. On HF stripped Si(001), nucleation was inhibited, resulting in poorer film morphology. ZrO2 showed remarkable stability against silicate formation, with no intermixing even after high temperature oxidation. The oxide is vulnerable to high temperature vacuum annealing, with silicidation occurring at temperatures above 900 °C.read more
Citations
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Journal ArticleDOI
High-κ gate dielectrics: Current status and materials properties considerations
TL;DR: In this paper, a review of the literature in the area of alternate gate dielectrics is given, based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward success.
Journal ArticleDOI
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
TL;DR: In this paper, the surface chemistry of the trimethylaluminum/water ALD process is reviewed, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials.
Journal ArticleDOI
Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
Journal ArticleDOI
High dielectric constant gate oxides for metal oxide Si transistors
TL;DR: In this article, a review of the development of high-k gate oxides such as hafnium oxide (HFO) and high-K oxides is presented, with the focus on the work function control in metal gate electrodes.
References
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Journal ArticleDOI
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more
TL;DR: In this paper, a comprehensive investigation of the thermo-dynamic stability of binary oxides in contact with silicon at 1000 K was conducted, including those involving ternary phases.
Journal ArticleDOI
Crystalline Oxides on Silicon: The First Five Monolayers
TL;DR: In this paper, a metaloxide-semiconductor capacitor using SrTiO{sub 3} as an alternative to SiOthinsp{sub 2} yields the extraordinary result of t{sub eqlt}10 {Angstrom}.
Journal ArticleDOI
Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
TL;DR: In this article, the authors present the present knowledge on tantalum pentoxide (Ta 2 O 5 ) thin films and their applications in the field of microelectronics and integrated microtechnologies.
Journal ArticleDOI
Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon
Glen D. Wilk,Robert M. Wallace +1 more
TL;DR: Hafnium silicate (HfSixOy) gate dielectric films with ∼6 at. % Hf exhibit significantly improved leakage properties over SiO2 in the ultrathin regime while remaining thermally stable in direct contact with Si.
Journal ArticleDOI
Ion beam crystallography of surfaces and interfaces
TL;DR: The current status of Rutherford Backscattering Spectrometry (RBS) of surfaces and interfaces is reviewed in this article, along with a variety of Monte Carlo methods for computer simulation of the shadowing and blocking experiments.
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High-κ gate dielectrics: Current status and materials properties considerations
Thermodynamic stability of binary oxides in contact With silicon
K. J. Hubbard,Darrell G. Schlom +1 more