Journal ArticleDOI
Unified current equation for predictive modeling of submicron MOSFETs
Reads0
Chats0
TLDR
In this paper, a unified current equation for short-channel submicron MOS devices is presented, which covers both weak and strong inversion, and the current in weak inversion is controlled by the subthreshold slope, for which a new physics-based predictive model is presented.Abstract:
For short-channel submicron MOS devices, we present a unified current equation, which covers both weak and strong inversion The current in weak inversion is controlled by the subthreshold slope, for which we derive a new physics-based, predictive model Furthermore, a new model for the carrier mobility is presented, which allows to derive closed-form current equations with good scalability The approaches have been implemented in the compact model PREDICTMOS and are qualified by comparison with numerical device simulations and measurementsread more
Citations
More filters
Journal ArticleDOI
$\hbox{MOS}^{3}$ : A New Physics-Based Explicit Compact Model for Lightly Doped Short-Channel Triple-Gate SOI MOSFETs
TL;DR: In this paper, a 3D drain-current model for double-gate or triple-gate silicon on insulator (SOI) metal-oxide-semiconductor field effect transistors is presented based on a physics-based 3D analysis.
Journal ArticleDOI
Analysis of current-voltage and capacitance―voltage―frequency characteristics in Al/p-Si Schottky diode with the polythiophene-SiO2 nanocomposite interfacial layer
TL;DR: In this article, the current-voltage characteristics of the prepared Al/Polythiophene-SiO 2 /p-Si Schottky diode were analyzed by using different methods at room temperature.
Journal ArticleDOI
Refinement of the Subthreshold Slope Modeling for Advanced Bulk CMOS Devices
TL;DR: In this article, a simple analytical model of the sub-threshold slope of CMOS devices was presented, which successfully describes the long-channel plateau, the initial improvement for medium gate lengths, and the final degradation for short gate lengths.
Journal ArticleDOI
Dark and illuminated electrical characteristics of Si-based photodiode interlayered with CuCo5S8 nanocrystals
Dilber Esra Yildiz,Hasan Hüseyin Güllü,Adem Sarilmaz,Faruk Ozel,Adem Kocyigit,Murat Yıldırım +5 more
TL;DR: In this article, the electrical properties of thin-film thin-filtered nanoparticles in the form of CuCo5S8 were investigated under the aim of photodiode application.
Journal ArticleDOI
Improved organic solar cell by incorporating silver nanoparticles embedded polyaniline as buffer layer
TL;DR: In this paper, the role of silver nanoparticles (AgNP) in polyaniline (PANI) as a buffer layer for ITO/AgNP-PANI/Pani/Al solar cell was investigated.
References
More filters
Journal ArticleDOI
Leakage current mechanisms and leakage reduction techniques in deep-submicrometer CMOS circuits
TL;DR: Channel engineering techniques including retrograde well and halo doping are explained as means to manage short-channel effects for continuous scaling of CMOS devices and different circuit techniques to reduce the leakage power consumption are explored.
Journal ArticleDOI
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
TL;DR: In this paper, a conformal mapping technique is used to analytically solve the two-dimensional Poisson equation, whereby inhomogeneous substrate doping is taken into account, for the geometry and voltage dependence of threshold voltage and for the subthreshold behavior of short-channel MOSFETs.
The EKV 3.0 Compact MOS Transistor Model: Accounting for Deep-Submicron Aspects
Matthias Bucher,Christian Enz,Francois Krummenacher,J.-M. Sallese,Christophe Lallement,A.-S. Porret +5 more
TL;DR: This research presents a probabilistic procedure for estimating the EKV-NQS response time step-by-step in the aftermath of an electrical shock to the response of the immune system.
Related Papers (5)
A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling
PREDICTMOS – a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations
Alexander Klös,A. Kostka +1 more