Journal ArticleDOI
Very high-mobility organic single-crystal transistors with in-crystal conduction channels
Jun Takeya,Masakazu Yamagishi,Y. Tominari,R. Hirahara,Yasuhiro Nakazawa,Takeshi Nishikawa,T. Kawase,Tatsuya Shimoda,S. Ogawa +8 more
TLDR
Very high-mobility organic transistors are fabricated with purified rubrene single crystals and high-density organosilane self-assembled monolayers in this paper, where the interface with minimized surface levels allows carriers to distribute deep into the crystals by more than a few molecular layers under weak gate electric fields, and the inner channel plays a significant part in the transfer performance.Abstract:
Very high-mobility organic transistors are fabricated with purified rubrene single crystals and high-density organosilane self-assembled monolayers. The interface with minimized surface levels allows carriers to distribute deep into the crystals by more than a few molecular layers under weak gate electric fields, so that the inner channel plays a significant part in the transfer performance. With the in-crystal carriers less affected by scattering mechanisms at the interface, the maximum transistor mobility reaches 18cm2∕Vs and the contact-free intrinsic mobility turned out to be 40cm2∕Vs as the result of four-terminal measurement. These are the highest values ever reported for organic transistors.read more
Citations
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Journal ArticleDOI
25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.
TL;DR: In this paper, the state-of-the-art in organic field effect transistors (OFETs) are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays.
Journal ArticleDOI
Inkjet printing of single-crystal films
Hiromi Minemawari,Toshikazu Yamada,Hiroyuki Matsui,Jun'ya Tsutsumi,Simon Haas,Ryosuke Chiba,Ryosuke Chiba,Reiji Kumai,Reiji Kumai,Tatsuo Hasegawa +9 more
TL;DR: It is shown that mixing fine droplets of an antisolvent and a solution of an active semiconducting component within a confined area on an amorphous substrate can trigger the controlled formation of exceptionally uniform single-crystal or polycrystalline thin films that grow at the liquid–air interfaces.
Journal ArticleDOI
Integrated materials design of organic semiconductors for field-effect transistors
TL;DR: Some of the major milestones along the way are highlighted to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.
Journal ArticleDOI
Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method
Yongbo Yuan,Gaurav Giri,Alexander L. Ayzner,Alexander L. Ayzner,Arjan P. Zoombelt,Stefan C. B. Mannsfeld,Jihua Chen,Dennis Nordlund,Michael F. Toney,Jinsong Huang,Zhenan Bao +10 more
TL;DR: The growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1] Benzothiophene (C8-BTBT) is described from a blended solution of C8- BTBT and polystyrene by using a novel off-centre spin-coating method, indicating their potential for transparent, high-performance organic electronics.
Journal ArticleDOI
Organic Optoelectronic Materials: Mechanisms and Applications
TL;DR: The article reviews the current understanding of the physical mechanisms that determine the (opto)electronic properties of high-performance organic materials and highlights the capabilities of various experimental techniques for characterization, summarizes top-of-the-line device performance, and outlines recent trends in the further development of the field.
References
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Journal ArticleDOI
Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors
TL;DR: A novel semiconducting material is proposed—namely, a transparent amorphous oxide semiconductor from the In-Ga-Zn-O system (a-IGZO)—for the active channel in transparent thin-film transistors (TTFTs), which are fabricated on polyethylene terephthalate sheets and exhibit saturation mobilities and device characteristics are stable during repetitive bending of the TTFT sheet.
Journal ArticleDOI
Intrinsic Charge Transport on the Surface of Organic Semiconductors
Vitaly Podzorov,Etienne Menard,A. Borissov,Valery Kiryukhin,John A. Rogers,Michael Gershenson +5 more
TL;DR: The air-gap field-effect technique enabled realization of the intrinsic (not limited by static disorder) polaronic transport on the surface of rubrene (C42H28) crystals over a wide temperature range.
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Control of carrier density by self-assembled monolayers in organic field-effect transistors
S. Kobayashi,Takao Nishikawa,Takao Nishikawa,Taishi Takenobu,S. Mori,Tatsuya Shimoda,Tatsuya Shimoda,Tadaoki Mitani,Hidekazu Shimotani,Noriyuki Yoshimoto,Seishi Ogawa,Yoshihiro Iwasa +11 more
TL;DR: A new technique is discussed that enables us to control the charge density in the channel by using organosilane self-assembled monolayers (SAMs) on SiO2 gate insulators.
Journal ArticleDOI
Temperature and gate voltage dependence of hole mobility in polycrystalline oligothiophene thin film transistors
TL;DR: In this paper, a method was developed to extract the carrier mobility from an analysis of the transfer characteristics of polycrystalline sexithiophene (6 T) transistors at temperatures ranging from 10 to 300 K.
Journal ArticleDOI
High‐Performance n‐ and p‐Type Single‐Crystal Organic Transistors with Free‐Space Gate Dielectrics
TL;DR: In this paper, the optical densities of the index matched coated spheres in a toluene/ethanol mixture and an appropriate reference dye in methanol were closely matched at the wavelength of excitation.