Showing papers on "Power module published in 2018"

Power Cycling Test Methods for Reliability Assessment of Power Device Modules in Respect to Temperature Stress

Abstract: Power cycling test is one of the important tasks to investigate the reliability performance of power device modules in respect to temperature stress. From this, it is able to predict the lifetime of a component in power converters. In this paper, representative power cycling test circuits, measurement circuits of wear-out failure indicators as well as measurement strategies for different power cycling test circuits are discussed in order to provide the current state of knowledge of this topic by organizing and evaluating current literature. In the first section of this paper, the structure of a conventional power device module and its related wear-out failure mechanisms with degradation indicators are discussed. Then, representative power cycling test circuits are introduced. Furthermore, on-state collector–emitter voltage $(V_{{\rm{CE\_ON}}})$ and forward voltage $(V_{F})$ measurement circuits for wear-out condition monitoring of power device modules during power cycling test are presented. Finally, different junction temperature measurement strategies for monitoring of solder joint degradation are explained.

Forecasting Solar Power Using Long-Short Term Memory and Convolutional Neural Networks

Abstract: As solar photovoltaic (PV) generation becomes cost-effective, solar power comes into its own as the alternative energy with the potential to make up a larger share of growing energy needs. Consequently, operations and maintenance cost now have a large impact on the profit of managing power modules, and the energy market participants need to estimate the solar power in short or long terms of future. In this paper, we propose a solar power forecasting technique by utilizing convolutional neural networks and long–short-term memory networks recently developed for analyzing time series data in the deep learning communities. Considering that weather information may not be always available for the location where PV modules are installed and sensors are often damaged, we empirically confirm that the proposed method predicts the solar power well with roughly estimated weather data obtained from national weather centers as well as it works robustly without sophisticatedly preprocessed input to remove outliers.

A New Characterization Technique for Extracting Parasitic Inductances of SiC Power MOSFETs in Discrete and Module Packages Based on Two-Port S-Parameters Measurement

Abstract: The parasitic inductances of silicon carbide (SiC) power mosfet s have a major influence on their operation and circuit performance. They incur negative effects such as switching oscillations, power losses, and electromagnetic interference noise. This paper introduces a new technique to accurately characterize the parasitic inductances of SiC power mosfet s in both discrete packages and power modules based on two-port S-parameters measurement. By treating a power mosfet as a two-port network, we obtain the scattering (S) and impedance (Z) parameters from network analyzer measurement. These parameters, through detailed network analysis, provide more accurate values of the internal parasitic inductances than the commonly used single-port impedance measurement technique. The new approach is first verified with high-frequency circuit simulation and then applied in the case study of SiC power mosfet s in a TO-247 discrete package and a half-bridge power module. In addition, a number of silicon power mosfet s and IGBTs in TO-247, TO-220, D2PAK, DPAK, and SO-8 packages are also characterized for comparison. A comparison between the characterization results from the new two-port and the prior art one-port methods reveals a significant difference ranging from 12.6% to 93.9%.

Improved SiC Power MOSFET Model Considering Nonlinear Junction Capacitances

Abstract: Silicon carbide (SiC) power metal–oxide–semiconductor field-effect transistors (mosfet s) have been applied in high-power and high-frequency converters recently. To effectively predict characteristics of SiC power mosfet s in the design phase, a simple and valid model is needed. In this paper, a simple improved SiC power mosfet behavioral model is proposed using SPICE language. Key parameters in the model are analyzed and determined in detail, including parasitic parameters of the power module, steady-state characteristic parameters, and nonlinear parasitic capacitances. The effect of negative turn- off gate drive voltage is considered and a continuously differentiable function is proposed to describe the gate–source capacitance. Experimental validation is performed under a double pulse circuit employing an N -channel power mosfet half-bridge module CAS300M12BM2 (Cree Inc.) rated at 300 A/1200 V. The main switching dynamic characteristic parameters of the model have been compared with those of the measured results. The results show that taking gate–source capacitance as a linear value as most previous models do will cause significant turn- on deviations between experiment and simulation results, while the improved model is more accurate compared with the measured results.

Assessment of 10 kV, 100 A Silicon Carbide mosfet Power Modules

Abstract: This paper presents a thorough characterization of 10 kV SiC mosfet power modules, equipped with third-generation mosfet chips and without external free-wheeling diodes, using the inherent SiC mosfet body-diode instead. The static performance (e.g., I DS– V DS , I DS– V GS, C – V characteristics, leakage current, body-diode characteristics) is addressed by measurements at various temperatures. Moreover, the power module is tested in a simple chopper circuit with inductive load to assess the dynamic characteristics up to 7 kV and 120 A. The SiC mosfet power module exhibits an on-state resistance of 40 mΩ at room-temperature and leakage current in the range of 100 nA, approximately one order of magnitude lower than that of a 6.5 kV Si-IGBT. The power module shows fast switching characteristics with the turn-on (turn-on loss) and turn-off (turn-off loss) times of 130 ns (89 mJ) and 145 ns (33 mJ), respectively, at 6.0 kV supply voltage and 100 A current. Furthermore, a peak short-circuit current of 900 A and a short-circuit survivability time of 3.5 μ s were observed. The extracted characterization results could serve as input for power electronic converter design and may support topology evaluation with realistic system performance predictability, using SiC mosfet power modules in the energy transmission and distribution networks.

Evolution of Power Converter Topologies and Technical Considerations of Power Electronic Transformer-Based Rolling Stock Architectures

Abstract: Power electronic transformer (PET) technology is one of the promising technology for medium/high power conversion systems. With the cutting-edge improvements in the power electronics and magnetics, makes it possible to substitute conventional line frequency transformer traction (LFTT) technology with the PET technology. Over the past years, research and field trial studies are conducted to explore the technical challenges associated with the operation, functionalities, and control of PET-based traction systems. This paper aims to review the essential requirements, technical challenges, and the existing state of the art of PET traction system architectures. Finally, this paper discusses technical considerations and introduces the new research possibilities especially in the power conversion stages, PET design, and the power switching devices.

Optimal Selection of Power Converter in DFIG Wind Turbine With Enhanced System-Level Reliability

Abstract: With the increasing penetration of wind power, reliable and cost-effective wind energy production is of more and more importance. As one of the common configurations, the doubly fed induction generator based partial-scale wind power converter is still dominating in the existing wind farms, and its reliability assessment is studied considering the annual wind profile. According to an electro-thermal stress evaluation, the time-to-failure of the key power semiconductors is predicted by using lifetime models and Monte Carlo based variation analysis. Aiming for the system-level reliability analysis, a reliability block diagram can be used based on Weibull distributed component-level reliability. A case study of a 2 MW wind power converter shows that the optimal selection of power module may be different seen from the reliability perspective compared to the electrical stress margin. It can also be seen that the B1 lifetimes of the grid-side converter and the rotor-side converter deviate a lot by considering the electrical stresses, while they become more balanced by using an optimized design strategies. Thus, the system-level lifetime increases significantly with an appropriate design of the back-to-back power converters.

Direct Single Impinging Jet Cooling of a mosfet Power Electronic Module

Abstract: This paper presents an approach of direct liquid jet impingement cooling of a typical mosfet power module. A single micro water jet was installed for cooling the upper surface of a mosfet semiconductor package. In contrast to standard cooling methods, this approach focuses on hot spot removal omitting any kind of heat spreading device. The cooling chamber was directly soldered to the mosfet cover that represents a very efficient way of liquid cooling. Two different configurations with and without electrical insulation (TIM) were used to investigate the importance of insulating material. In the range of 10–100 mL/min coolant flow rates at an inlet temperature of 22.5 $^\circ$ C a maximum power distribution of 51 W (at 30 mL/min) next to a maximum measured mosfet temperature of 163 $^\circ$ C could be realized. Heat transfer coefficients up to 12 000 W/m $^{2}\cdot$ K were achieved using only 10.8 cm $^{3}$ of assembly space for the cooling device. With electrical insulation, the heat transfer coefficient exceeded 6000 W/m $^{2}\cdot$ K at a coolant flow rate of 30 mL/min and pumping power of 3 mW. The results illustrate the potential of direct liquid cooling using impinging microjets in combination with a compact injection chamber. The individual cooling of semiconductors offers new perspectives in the design of power electronic modules.

A Physical RC Network Model for Electrothermal Analysis of a Multichip SiC Power Module

Abstract: This paper is concerned with the thermal models which can physically reflect the heat-flow paths in a lightweight three-phase half-bridge two-level SiC power module with six MOSFETs and can be used for coupled electrothermal simulation. The finite-element (FE) model was first evaluated and calibrated to provide the raw data for establishing the physical resistor–capacitor (RC) network model. It was experimentally verified that the cooling condition of the module mounted on a water cooler can be satisfactorily described by assuming the water cooler as a heat exchange boundary in the FE model. The compact RC network consisting of 115 R and C parameters to predict the transient junction temperatures of the six MOSFETS was constructed, where cross-heating effects between the MOSFETs are represented with lateral thermal resistors. A three-step curve fitting method was especially developed to overcome the challenge for extracting the R and C values of the RC network from the selected FE simulation results. The established compact RC network model can physically be correlated with the structure and heat-flow paths in the power module, and was evaluated using the FE simulation results from the power module under realistic switching conditions. It was also integrated into the LTspice model to perform the coupled electrothermal simulation to predict the power losses and junction temperatures of the six MOSFETs under switching frequencies from 5 to 100 kHz which demonstrate the good electrothermal performance of the designed power module.

3-D Wire Bondless Switching Cell Using Flip-Chip-Bonded Silicon Carbide Power Devices

Abstract: This paper presents a three-dimensional (3-D) wire bondless power module using silicon carbide (SiC) power devices. Commercially available SiC power devices are designed for wire bonding. Wire bonds have an inherent parasitic inductance that limits high-frequency switching. This results in an underutilization of the full potential of SiC power devices, which have very low switching losses at high frequencies. Wire-bonded power modules run into a performance ceiling when it comes to ultrafast switching. This paper strives to provide a solution to this issue, which involves reconfiguring a commercially available bare die SiC power device into a flip-chip-capable device. A wire bondless SiC Schottky diode package was demonstrated and its performance was contrasted with a conventional wire-bonded package. A 24% reduction in the ON-state resistance was observed in the wire bondless package. As a next step, wire bondless SiC MOSFET packages were developed and tested in a half-bridge configuration in a highly integrated 3-D arrangement. This approach departs from the conventional concept of a power module—demonstrating a direct-bonded-copper-less and baseplate-less half-bridge switching cell. Double-pulse tests conducted on the cell showed >3× reduction in the parasitic inductance of the 3-D cell as compared with a conventional wire-bonded module.

Methodology for Characterization of Common-Mode Conducted Electromagnetic Emissions in Wide-Bandgap Converters for Ungrounded Shipboard Applications

Abstract: This paper describes the development of a dedicated electromagnetic interference (EMI) characterization platform for the evaluation of wide bandgap-based converters in ungrounded architectures of the type likely to be employed on the future shipboard systems. This platform is designed to support the characterization of wide-bandgap-based converters operating at switching frequencies of hundreds of kilohertz; with power levels up to 100 kVA and with expected emissions up to 100 MHz. To illustrate the capabilities of this platform, the conducted emissions of a SiC-based half-bridge converter are evaluated (with a focus on common-mode (CM) behavior), and a parametric study is conducted which considers variations in the impedance between the half-bridge module base plate and a representative grounding structure. The focus of this work is not only the half-bridge converter which serves as the preliminary test subject, but also rather the custom metrological setup used for characterization, which is designed to discover sensitivities to resonant paths so that the design guidelines for peripheral structures and EMI mitigating components can be developed in the future studies. One major contribution of this work is the discovery that the symmetry of the parasitic capacitances within the converter’s multichip power module is an important factor which significantly influences the CM conducted emissions of the half-bridge structure, which serves as a building block for more complex converter topologies.

Spatial Electro-Thermal Modeling and Simulation of Power Electronic Modules

Abstract: In this work, the spatial electro-thermal modeling and simulation of power electronic modules is discussed. It is shown how physical and mathematical modeling techniques can be combined to obtain a compact time-efficient electro-thermal simulation framework for power electronic modules. The accuracy of the modeling framework is demonstrated based on experiments. It can be used for the fast calculation of the temperature distribution of a power module in an electric vehicle over driving cycles. The spatial temperature information allows to effectively estimate the lifetime of the power module.

Thermal Stress Based Model Predictive Control of Electric Drives

Abstract: The reliable operation of the power electronics system of an electric drive is a critical design target. Thermal cycling of the semiconductors in the power module is one of the main stressors. Active thermal control is a possibility to control the junction temperatures of power modules in order to reduce the thermal stress. In this paper, the finite control set model predictive control is designed for thermal stress based driving of electric drives converters. The optimal switching vector is selected using a multiparameter optimization that includes the current reference error, the additional thermal stress that a specific switching vector applies to each semiconductor, the temperature spread between semiconductors in the module, overall efficiency, and device constraints. This enables relieving the stress due to thermal cycles and reducing unsymmetrical fatigue of the modules chips while avoiding unnecessary losses. The approach is derived in theory and applied in simulation and experiment.

Design and Testing of 1 kV H-bridge Power Electronics Building Block Based on 1.7 kV SiC MOSFET Module

Abstract: This paper presents a part of the design for a power electronics building block (PEBB) based on 10 kV SiC MOSFET power module. A H-bridge PEBB system architecture is introduced at the beginning, followed by the design details of a smart gate driver. Strong noise-immunity, high driving current and effective protection circuitry have been accomplished. The design of power supply that feeds the gate drivers while providing 10 kV galvanic isolation is also shown. A resonant current bus (RCB)-based topology is proposed to supply the gate drivers, achieving both high density and low input-output capacitance of the isolation. Finally, a 10 kV laminated DC bus-bar with new layer-stacking structure is presented. Experimental results are embedded in each section to validate the PEBB performance.

Forward Dual-Active-Bridge Solid-State Transformer for a SiC-Based Cascaded Multilevel Converter Cell in Solar Applications

Abstract: Central inverters based on conventional topologies are the current preferred solution in solar farms because of their low cost and simplicity. However, such topologies have some disadvantages such as poor maximum power tracking, use of bulky filters, and low-frequency transformers. An interesting alternative in this case is the SiC-based cascaded multilevel converter (CMC), which provides a distributed maximum power point tracking control with reduced footprint and high flexibility. Each cell of a CMC usually has, as an intermediate stage, a solid-state transformer based on a dual-active-bridge dc–dc converter. Due to the unidirectional power flow characteristic of the photovoltaic application and aiming at further reduction in the converter volume, this work proposes a forward dual-active-bridge (F-DAB) topology, which reduces the number of active switches. This paper shows through analytical, simulation, and experimental results that the cell using an F-DAB is superior to other unidirectional topologies in three aspects: higher power density with commercially available power modules, reduced part count, and simplicity of control.

Thermally Compensated Discontinuous Modulation Strategy for Cascaded H-Bridge Converters

Abstract: A widely adopted multilevel converter topology is the cascaded H-bridge (CHB), as it can provide voltage and power scalability. However, since the CHB converter can be composed by cells with different remaining lifetime, it could be useful to delay a fault of higher aged cells in order to prolong the entire converter's lifetime. In this paper, a thermally compensated discontinuous pulse width modulation (DPWM) strategy is proposed in order to reduce the thermal stress for power semiconductors in power modules of higher aged cells. Considering the thermal cycles as the most influencing cause of wear out of power modules, the proposed method compensates the thermal cycles under a varying power profile by manipulating the clamping angle of the DPWM. Moreover, the proposed method obtains a comparable total harmonic distortion performance to the phase-shifted carrier modulation.

Prognostic System for Power Modules in Converter Systems Using Structure Function

Abstract: This paper proposes an on-board methodology for monitoring the health of power converter modules in drive systems, using vector control heating and structure function to check for degradation. It puts forward a system that is used on-board to measure the cooling curve and derive the structure function during idle times for maintenance purposes. The structure function is a good tool for tracking the magnitude and location of degradation in power modules. The ability to keep regular track of the actual degradation level of the modules enables the adoption of preventive maintenance, reducing or even eliminating altogether the appearance of failures during operation, significantly improving the availability of the power devices. The novelty in this work is the complete system that is used to achieve degradation monitoring, combining the heating technique and the measurement without additional power components except the measurement circuit which can be integrated into the gate drive board and the challenges encountered. Experimental results obtained from this show that it is possible to implement an on-board health monitoring system in converters which measures the degradation on power modules.

Optimized Power Modules for Silicon Carbide mosfet

Abstract: A new 3-D power module dedicated to SiC mosfet is presented. It is based on printed circuit board embedded die technology and is compared with a standard power module. After considering the characteristics that contribute to optimal switching performances from the packaging point of view, both modules are characterized in terms of switching behavior and electromagnetic interference emissions. The results show better performances of the 3-D embedded die module with stray inductances below 2 nH and two times less common mode noise.

Increasing the Energy and Reliability Indicators of Multilevel Frequency Converters for Oil- and Gas-Sector Installations

Abstract: This paper presents a method for improving energy indicators and increasing system reliability by adopting multilevel schemes of power circuits of semiconducting frequency converters of a voltage class of up to 1 kV. An optimum number of phases was selected at the first stage based on the criterion of the minimum cost to solve the problem. Then, this criterion was supplemented by the limitation of the electric losses and, at the final stage, the problem was solved based on the condition of securing the specified indicator of the failure- free operation. Modern semiconducting converters for the large specified capacities are of modular configuration and each of the frequency converter assemblies (rectifier, invertor) includes, as a rule, some parallel connected modules. In these conditions, an increase in the number of phases at which the phase winding of the engine is made multiphase and the previously parallel-connected power modules of self-commutated inverters are galvanically decoupled and connected separately to each of the engine phases, which allows increasing the reliability indicators of the system without any additional capital costs. It is theoretically shown and experimentally confirmed that, due to the development of the modern element base, the use of three-level frequency converters for a voltage up to 1 kV is economically justified. It is determined that, in addition to the known advantages of such a circuit (reduction in the switching losses and overvoltages on the phase winding of the engine), it is possible to increase additionally the coefficient of efficiency of a frequency converter due to a larger number of the degrees of freedom during the switch over to multiphase circuits.

Electrical Performance and Reliability Characterization of a SiC MOSFET Power Module With Embedded Decoupling Capacitors

Abstract: Integration of decoupling capacitors into silicon carbide (SiC) metal oxide semiconductor field effect transistor ( mosfet ) modules is an advanced solution to mitigate the effect of parasitic inductance induced by module assembly interconnects. In this paper, the switching transient behavior is reported for a 1.2-kV SiC mosfet module with embedded dc-link capacitors. It shows faster switching transition and less overshoot voltage compared to a module using an identical package but without capacitors. Active power cycling and passive temperature cycling are carried out for package reliability characterization and comparisons are made with commercial Si and SiC power modules. Scanning acoustic microscopy images and thermal structure functions are presented to quantify the effects of package degradation. The results demonstrate that the SiC modules with embedded capacitors have similar reliability performance to commercial modules and that the reliability is not adversely affected by the presence of the decoupling capacitors.

Phase Current Sensor and Short-Circuit Detection based on Rogowski Coils Integrated on Gate Driver for 1.2 kV SiC MOSFET Half-Bridge Module

Abstract: Silicon-carbide (SiC) MOSFETs are enabling electrical vehicle motor drives to meet the demands of higher power density, efficiency, and lower system cost. Hence, this paper seeks to explore the benefits that a gate-driver-level intelligence can contribute to SiC-based power inverters. The intelligence is brought by PCB-embedded Rogowski switch-current sensors (RSCS) integrated on the gate driver of a 1.2 kV, 300 A SiC MOSFET half-bridge module. They collect two MOSFET switch currents in a manner of high magnitude, high bandwidth, and solid signal isolation. The switch-current signals are used for short-circuit detection under various fault impedances, as well as for phase-current reconstruction by subtracting one switch current from another. The fundamentals and noise-immunity design of the gate driver containing the RSCS are presented in the paper and can be applied to any half-bridge power module. A three-phase inverter prototype has been built and operated in continuous PWM mode. On this setup, the performance and limitations of the short-circuit detection and phase-current reconstruction are experimentally validated by comparing with commercial current probes and Hall sensors.

Temperature-Controlled Power Semiconductor Characterization Using Thermoelectric Coolers

Abstract: Accurate characterization of power semiconductors over wide operating ranges is a necessity to accomplish better electrical and thermal designs of power converters. Especially, switching losses of power devices are rarely given sufficiently detailed in their datasheets, since they also depend strongly on the driving circuitry and design of the power converter itself. A means to extract the switching losses are double pulse measurements where the desired operating points can be freely chosen. This paper introduces a temperature conditioning unit that allows the adjustment of the junction temperature between −40 °C and 200 °C using thermoelectric coolers (TECs). The unit is for an automated double pulse test bench with dc-link voltages of up to 1 kV and switching currents of up to 1 kA. Up to 1 kW of electrical power is required to power the TECs. The design of the power converter is shown as well as the control scheme. An algorithm, which automatically extracts the switching losses of the measured double pulse waveforms is presented. An exemplary characterization of an Infineon EconoDual power module is conducted and the results are presented.

Liquid Metal Magnetohydrodynamic Pump for Junction Temperature Control of Power Modules

Abstract: Power modules are the most common components to fail in power converters that are employed in mass transportation systems, thus leading to high unscheduled maintenance cost. While operating, high junction temperature swings occur that result in high thermomechanical stress within the structure of the power module, reducing the lifetime of the module. Liquid metals as a cooling medium received so far little attention in the area of power semiconductor cooling, despite being able to remove high heat fluxes. This paper shows for the first time how liquid metal is used to reduce actively the junction temperature swing. A magnetohydrodynamic (MHD) pump has been designed for this purpose allowing active control of the flow rate of the liquid metal that impinges against the baseplate of the module. The pump has been 3-D printed and is attached directly to the power module. A closed-loop temperature control system is implemented, able to estimate the insulated-gate bipolar transistor's junction temperature, and thus, controls the MHD power. This paper presents simulation and experimental results showing reductions in the temperature swing over the full load cycle with 12 °C as the highest observed reduction rate. This paper also shows detailed designs of the MHD pump and the controller hardware.

A Short-Time Transition and Cost Saving Redundancy Scheme for Medium-Voltage Three-Phase Cascaded H-Bridge Electronic Power Transformer

Abstract: Reliability is one of the major concerns when the electronic power transformer (EPT) is employed in the field, and redundancy is a common approach to improve the reliability. For hot and cold redundancy schemes, the redundancy performance will be degraded due to the small number of power modules (PMs) when the EPT is employed in the medium-voltage power grid. For the three-phase EPT, at least three redundant PMs are needed (one redundant PM per phase), which leads to a high redundancy cost. In this paper, a novel redundancy scheme is proposed. The proposed scheme can accomplish the faulty PM replacement process within tens of microseconds with nearly no transition. And only one PM and a set of switches are needed for the three-phase redundancy, which can effectively save the redundancy cost. The proposed scheme is analyzed and supported by simulations and experimental results.

A Survey on Recent Advances of Medium Voltage Silicon Carbide Power Devices

Abstract: Medium voltage (MV) Silicon Carbide (SiC) power devices have become available as engineering samples. Recent studies show that they outperform their Silicon (Si) counterparts regarding voltage blocking capability, specific on-state resistance, switching speed and maximum allowable junction temperature. It is projected that MV SiC power devices will bring revolutionary changes in medium and high voltage applications such as traction drives for locomotives, industrial motor drives, utility power transmission systems, etc. This paper presents a summary of recent advances in MV SiC power devices, including MOSFETs, IGBTs, GTOs and super-cascode devices. Technical challenges of their applications such as device packaging, gate drive design and gate drive auxiliary power supply design are discussed. Testing results of three state-of-the-art MV SiC devices, including a 4 kV, 5 A discrete SiC MOSFET, a 4.5 kV, 40 A SiC super-cascode device and a 10 kV, 40 A SiC MOSFET power module, are presented as examples.

Optimal Derating Strategy of Power Electronics Converter for Maximum Wind Energy Production with Lifetime Information of Power Devices

Abstract: One of the most important causes of failure in wind power systems is due to the failures of the power converter and due to one of its most critical components, the power semiconductor devices. This paper proposes a novel derating strategy for the wind turbine system based on the reliability performance of the converter and the total energy production throughout its entire lifetime. An advanced reliability design tool is first established and demonstrated, in which the wind power system together with the thermal cycling of the power semiconductor devices are modeled and characterized under a typical wind turbine system mission profile. Based on the reliability design tools, the expected lifetime of the converter for a given mission profile can be quantified under different output power levels, and an optimization algorithm can be applied to extract the starting point and the amount of converter power derating which is necessary in order to obtain the target lifetime requirement with a maximum energy production capability. A nonlinear optimization algorithm has been implemented and various case studies of lifetime requirements have been analyzed. Finally, an optimized derating strategy for the wind turbine system has been designed and its impact has been highlighted.

Surgical instrument systems comprising battery arrangements

Abstract: A surgical instrument system comprising a handle, a shaft, and a disposable power module is disclosed. The handle comprises a motor, a control switch, and a motor-control processor which is in communication with the control switch. In various instances, the disposable power module comprises a disposable battery and a display unit configured to indicate at least one function of the surgical instrument system.

Power supply device

Abstract: This power supply device is provided with: a first assembly provided with a first heat sink 10 which has a first recess portion 16 in an other direction side thereof, a first power module 30 which is disposed on a one direction side of the first heat sink 10, and a first current module 110 which has at least a portion thereof disposed within the first recess portion 16 and is electrically connected to the first power module 30; and a second assembly provided with a second heat sink 20 which has a second recess portion 26 in the one direction side thereof, a second power module 40 disposed on the other direction side of the second heat sink 20, and a second current module 120 which has at least a portion thereof disposed within the second recess portion 26 and is electrically connected to the second power module 40 The other direction side of the first heat sink 10 and the one direction side of the second heat sink 20 are disposed such that said sides are mutually facing