Deren Yang

TL;DR: In this article, the behavior of copper precipitation in cast multicrystalline silicon (mc-Si) annealed at different temperatures under air cooling (30 K/s) or slow cooling (0.3 k/s), was investigated by scanning infrared microscopy (SIRM).

TL;DR: A set of Czochralski-grown Si (Cz-Si) single crystals doped with nitrogen N and P-T pre-treated has been characterized using thermoelectric power measurements at room temperature under ultrahigh pressure P (0−20 GPa) as discussed by the authors.

TL;DR: In this article, the impact of tin doping on interstitial oxygen diffusion in Czochralski silicon is investigated by density functional theory (DFT) calculations, where two aspects are taken into consideration: (i) Sn induced lattice strain and lattice expansion; (ii) direct and vacancy-mediated interaction between Sn and Oi atoms.

TL;DR: In this paper, the morphology and structure of the nanomaterials have been characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM) and selected area electron diffraction(SAED) pattern.

TL;DR: In this article, the nitrogen-doped Czochralski (NCZ) silicon wafer was compared with the conventional CZ silicon, and it was proved that the nitrogen doping does not affect the formation of defect-free DZ by the RTP-based internal gettering (IG) process.