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Deren Yang

Researcher at Zhejiang University

Publications -  998
Citations -  26247

Deren Yang is an academic researcher from Zhejiang University. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 71, co-authored 944 publications receiving 22268 citations. Previous affiliations of Deren Yang include Zhejiang Sci-Tech University.

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Synthesis of hexagonal structured wurtzite and chalcopyrite CuInS2 via a simple solution route

TL;DR: Through a simple and quick solution route, both wurtzite- and chalcopyrite-structure CIS are synthesized, and well-controlled wurtZite CIS hexagonal plates are obtained when an appropriate agent is added.
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Simple Near-Infrared Electron Acceptors for Efficient Photovoltaics and Sensitive Photodetectors.

TL;DR: Three simple NIR acceptors are developed with absorption up to 1000 nm, which possess the same dithiophene cores with the varied heteroatom linkages from carbon (C) atom for W1, to silicon (Si) for W2 and nitrogen for W3, respectively, and it is found that the tuning of only one atom for simple acceptors can surprisingly lead to a large difference in photoelectric properties and solid stacking, as well as the performance in optoelectronics.
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Stabilizing Fullerene for Burn‐in‐Free and Stable Perovskite Solar Cells under Ultraviolet Preconditioning and Light Soaking

TL;DR: In this paper, a small amount of bathophenanthroline (Bphen) is introduced into [6,6]-phenyl-C61 -butyric acid methyl ester and it is found that Bphen can stabilize the C60 -cage well through formation of much more thermodynamically stable charge-transfer complexes.
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Synthesis of aluminium borate nanowires by sol-gel method

TL;DR: In this article, a self-catalytic mechanism was used to explain the growth of the nanowires, and the diameter of Al 4 B 2 O 9 and Al 18 B 4 O 33 was shown to range from 7 to 17nm.
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Bonding of Oxygen at the Oxide/Nanocrystal Interface of Oxidized Silicon Nanocrystals: An Ab Initio Study

TL;DR: In this article, the bonding of oxygen (O) at the oxide/nanocrystal (NC) interface after hydrogen-passivated silicon (Si) NCs are oxidized was investigated.