Deren Yang

TL;DR: In this article, the authors investigated the kinetics characteristics of boron-oxygen complexes responsible for light-induced degradation in p-type compensated c-Si and found that the pre-exponential factors of complexes generation in compensated C-Si are proportional to the square of the net doping concentration, which suggests that the latent centers should exist.

TL;DR: In this article, an external bias voltage on the bonding interface increases the majority carrier density at this deep level, thereby enhancing the local dislocation-related luminescence, however, beyond a critical voltage, corresponding to saturation of the majority occupancy, the luminance intensity decreases due to the reduction in minority carrier density.

TL;DR: In this article, the influence of dislocations on nitrogen-oxygen (N-O) complexes in nitrogen-doped Czochralski (NCZ) silicon was investigated.

TL;DR: In this paper , the authors compared the growth of n-type cast mono-like silicon ingots under normal and reduced pressure, and the fitting results of resistivity suggest that Scheil's equation which describes the solute redistribution during the non-equilibrium solidification process of the crystals can be used to calculate theoretical resistivity distribution of lightly phosphorus-doped ingots.

TL;DR: In this paper, the effect of the prior conventional furnace anneal at 1250°C with different cooling rates on oxygen precipitation in Czochralski silicon during the subsequent low-high two-step heat treatment was investigated.