D
Deren Yang
Researcher at Zhejiang University
Publications - 998
Citations - 26247
Deren Yang is an academic researcher from Zhejiang University. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 71, co-authored 944 publications receiving 22268 citations. Previous affiliations of Deren Yang include Zhejiang Sci-Tech University.
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Kinetic suppression of boron–oxygen complexes in p-type Czochralski silicon by tin doping
Peng Wang,Peng Wang,Xianzi Chen,Zihan Wang,Xiaodong Zhu,Ping Lin,Can Cui,Deren Yang,Xuegong Yu +8 more
TL;DR: In this paper, the impact of tin doping on boron-oxygen (B-O) complexes responsible for light-induced-degradation (LID) in p-type Czochralski silicon has been investigated.
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High-Performance and Self-Powered X-Ray Detectors Made of Smooth Perovskite Microcrystalline Films with 100-μm Grains.
Ning Li,Yuyang Li,S. Xie,Jinming Wu,Nianqiao Liu,Qinglian Lin,Yang Liu,Shuang Yang,Gang Lian,Yanjun Fang,Deren Yang,Zhaolai Chen,Xutang Tao +12 more
TL;DR: In this paper , a dense and smooth perovskite microcrystalline films with both merits of single crystals and poly-crystal films through polycrystal-induced growth and hot-pressing treatment (HPT) are presented.
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Study of sulphidation of Cu–In nanoparticle precursor films with an air-stable process
TL;DR: In this paper, the large-grained and high crystalline CuInS2 films were prepared based on a metal-nanoparticle ink method, assisted by an air heat treatment (air-stable) process.
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Effect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski silicon
TL;DR: In this article, the effect of oxygen precipitates and induced dislocations on oxidation-induced stacking faults in nitrogen-doped Czochralski (NCZ) silicon has been investigated.
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Participation of nitrogen impurities in the growth of grown-in oxide precipitates in nitrogen-doped Czochralski silicon
TL;DR: In this article , the effects of pre-anneals at temperatures of 900-1200°C on the formation of N-O STDs at 650°C in nitrogen-doped Czochralski (NCZ) silicon were investigated.