Deren Yang

TL;DR: In this article, the electron beam evaporation (EBE) technique was used to fabricate two different types of iron silicide films with two different structures by annealing at 800oC for 5 h. X-ray diffraction, Fourier transform infrared (FTIR), and scanning electron microscope (SEM) were carried out to describe the characteristics and structures of the films.

TL;DR: In this article, the size and density of oxygen induced defects in multicrystalline ingot and polycrystalline RGS ribbon silicon is investigated under definite conditions. And a numerical program has been developed that allows one to simulate the precipitation process and to determine the size of the precipitates for any thermal treatment.

TL;DR: In this article, the authors compared the real-time oxygen precipitation kinetics of heavily germanium-doped Czochralski-silicon (Cz-Si) at 900°C under different pre-annealing conditions.

TL;DR: In this paper, the growth kinetics from moderate and high germanium doped Czochralski-growth silicon (Cz-Si) are investigated at 1000 ° C utilizing high-energy X-ray diffraction and analyzed with respect to precipitate density within a diffusion-driven growth model.

TL;DR: In this article, the behavior of oxygen precipitation in Czochralski silicon doped with germanium (Ge) at high temperatures has been studied and it was found that higher density but smaller-sized oxygen precipitates were formed in GCz-Si at extremely high temperature, which could be attributed to the enhanced nucleation of oxygen precipitate by the Ge-doping.