There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

In this critical review, metal oxides-based materials for electrochemical supercapacitor (ES) electrodes are reviewed in detail together with a brief review of carbon materials and conducting polymers. Their advantages, disadvantages, and performance in ES electrodes are discussed through extensive analysis of the literature, and new trends in material development are also reviewed. Two important future research directions are indicated and summarized, based on results published in the literature: the development of composite and nanostructured ES materials to overcome the major challenge posed by the low energy density of ES (476 references).

/pdf/a-review-of-electrode-materials-for-electrochemical-2cok5em0bo.pdf

A review of electrode materials for electrochemical supercapacitors

1. Introduction 20642. Synthesis of Magnetic Nanoparticles 20662.1. Classical Synthesis by Coprecipitation 20662.2. Reactions in Constrained Environments 20682.3. Hydrothermal and High-TemperatureReactions20692.4. Sol-Gel Reactions 20702.5. Polyol Methods 20712.6. Flow Injection Syntheses 20712.7. Electrochemical Methods 20712.8. Aerosol/Vapor Methods 20712.9. Sonolysis 20723. Stabilization of Magnetic Particles 20723.1. Monomeric Stabilizers 20723.1.1. Carboxylates 20733.1.2. Phosphates 20733.2. Inorganic Materials 20733.2.1. Silica 20733.2.2. Gold 20743.3. Polymer Stabilizers 20743.3.1. Dextran 20743.3.2. Polyethylene Glycol (PEG) 20753.3.3. Polyvinyl Alcohol (PVA) 20753.3.4. Alginate 20753.3.5. Chitosan 20753.3.6. Other Polymers 20753.4. Other Strategies for Stabilization 20764. Methods of Vectorization of the Particles 20765. Structural and Physicochemical Characterization 20785.1. Size, Polydispersity, Shape, and SurfaceCharacterization20795.2. Structure of Ferro- or FerrimagneticNanoparticles20805.2.1. Ferro- and Ferrimagnetic Nanoparticles 20805.3. Use of Nanoparticles as Contrast Agents forMRI20825.3.1. High Anisotropy Model 20845.3.2. Small Crystal and Low Anisotropy EnergyLimit20855.3.3. Practical Interests of Magnetic NuclearRelaxation for the Characterization ofSuperparamagnetic Colloid20855.3.4. Relaxation of Agglomerated Systems 20856. Applications 20866.1. MRI: Cellular Labeling, Molecular Imaging(Inﬂammation, Apoptose, etc.)20866.2.

Magnetic Iron Oxide Nanoparticles: Synthesis, Stabilization, Vectorization, Physicochemical Characterizations, and Biological Applications

[Liu, Chang; Li, Feng; Ma, Lai-Peng; Cheng, Hui-Ming] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China.;Cheng, HM (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China;cheng@imr.ac.cn

Advanced Materials for Energy Storage

Aligned single crystal boron nanowires (BNWs) were fabricated by CVD process in nano-channel Al/sub 2/O/sub 3/ (NCA) substrates at 800/spl deg/C. Using boron nanowires as precursors, arrayed single crystal hexagonal MgB/sub 2/ nanowires were fabricated by reacting BNWs in NCA with Mg vapor in a sealed vacuum quartz tube. And it is indicated that the nanowires had a superconducting transition temperature (T/sub c/) at /spl sim/35 K. Mg/sub 3/B/sub 2/O/sub 6/ nanowires were fabricated in-situ at 950/spl deg/C by reacting Mg, diborane and traces of oxygen. The growth mechanisms of these nanowires have been discussed.

http://ieeexplore.ieee.org/iel5/10100/32360/01511408.pdf

Synthesis of boron and boride compounds nanowire arrays by chemical vapor deposition

Oxygen precipitate-related defects in Czochralski (Cz) silicon have been studied by electron-beam-induced current (EBIC) and deep-level transient spectroscopy (DLTS). The EBIC results present that oxygen precipitates combined with dislocations can strengthen carrier recombination. The DLTS data reveals two levels of T 1 (E v + 0.43 eV) and T 2 (E v + 0.26 eV), which are related to the oxygen precipitates and dislocations, respectively. Hydrogen can partly passivate the recombination activity of oxygen precipitates and dislocations, as well as their induced electronic states. The results are of interest for deeply understanding the electronic properties of oxygen precipitates and their induced dislocations in Cz silicon used in the semiconductor industry.

Electrical properties of oxygen precipitate-related defects in Czochralski silicon

A novel hydrofluoric acid (HF) free atmospheric pressure chemical vapor deposition (APCVD) method has been developed to synthesize macropores on silicon Field emission scanning electron microscopy (FESEM), X-ray powder diffraction (XRD) and energy-dispersive X-ray (EDX) spectrum indicate that the composition of macropores with the diameters of several hundred nanometers is silica Moreover, the mechanism of the formation of the macropores has been preliminarily discussed The photoluminescence (PL) spectrum of the macropores shows a broad violet emission band with the peak position at 402 nm, which is related with the defects of silica

Hydrofluoric acid free synthesis of macropores on silicon by chemical vapor deposition and their photoluminescence

Disclosed is a process for the inner absorption of impurities in a Czochralski silicon wafer, comprising: (1) heating the Czochralski silicon wafer to 1200°C-1250°C at a rate of 50°C-100°C/s under nitrogen atmosphere, maintaining for 30-150 s, then cooling the same to 800°C-1000°C at a rate of 5°C-50°C/s, followed by natural cooling; (2) annealing the Czochralski silicon wafer treated in step (1) under argon atmosphere at 800°C-900°C for 8-16 hours. The present invention contains only two steps of heat treatment processes, with the temperature and time required being lower than in the prior art and the thermal budget significantly reduced; moreover, the concentration of bulk microdefects and the width of clean zone can be controlled very conveniently by the temperature, time, and cooling rate of the quick heat treatment in the first step.

Process for inner absorption of impurities in czochralski silicon wafer

The effect of oxygen precipitation on the annihilation of voids in nitrogen-doped Czochralski (NCZ) silicon has been investigated in this paper It was found that, in comparison with the control CZ silicon wafers, the NCZ silicon wafer possessed denser crystal originated particles (COPs) in smaller size On the other hand, it was indicated that, by low-high two step thermal cycles, the COPs in NCZ silicon could be annihilated in pace with the significant nitrogen enhanced oxygen precipitation, while the COPs in the CZ wafer were difficult to annihilate, accompanied with a slight oxygen precipitation Based on these facts, the correlation of oxygen precipitation and void annihilation in NCZ silicon was discussed

Deren Yang

Papers

Synthesis of boron and boride compounds nanowire arrays by chemical vapor deposition

Electrical properties of oxygen precipitate-related defects in Czochralski silicon

Hydrofluoric acid free synthesis of macropores on silicon by chemical vapor deposition and their photoluminescence

Process for inner absorption of impurities in czochralski silicon wafer

Correlation of oxygen precipitation and void annihilation in nitrogen-doped Czochralski silicon