D
Deren Yang
Researcher at Zhejiang University
Publications - 998
Citations - 26247
Deren Yang is an academic researcher from Zhejiang University. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 71, co-authored 944 publications receiving 22268 citations. Previous affiliations of Deren Yang include Zhejiang Sci-Tech University.
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Preparation of echinus-like SiO2@Ag structures with the aid of the HCP phase
TL;DR: A novel echinus-like hybrid structure composed of a SiO(2)@Ag core-shell and many silver nanorods was synthesized and the rapid and free growth of silver nuclei resulted in the appearance of the HCP phase.
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CH3NH3PbBr3 Quantum Dot-Induced Nucleation for High Performance Perovskite Light-Emitting Solar Cells.
Peng Wang,Peng Wang,Jiangsheng Xie,Ke Xiao,Haihua Hu,Can Cui,Yaping Qiang,Ping Lin,V. Arivazhagan,Lingbo Xu,Zhengrui Yang,Yuxin Yao,Tao Lu,Zihan Wang,Xuegong Yu,Deren Yang +15 more
TL;DR: The heterogeneous nucleation based on high lattice matching and a low free-energy barrier significantly improves the crystallinity of CH3NH3PbI3 films with decreased grain sizes, resulting in longer carrier lifetime and lower trap-state density in the films.
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Low temperature chemical reaction synthesis of single-crystalline Eu(OH)3 nanorods and their thermal conversion to Eu2O3 nanorods
TL;DR: In this article, a simple method for chemical reaction synthesis of Eu(OH)3 nanorods with a diameter of 20-30nm and a length of about 300nm at 90-°C using cyclohexylamine as the alkaline source instead of NaOH with subsequent thermal conversion to Eu2O3 nanors at 700°C.
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Intrinsic gettering in germanium-doped Czochralski crystal silicon crystals
TL;DR: In this paper, the intrinsic gettering properties of germanium-doped Czochralski (GCZ) silicon with different concentrations of Germanium has been investigated and it was found that the good defect-free denude zones in the near surface of the GCZ silicon could be achieved using simply a one-step high temperature annealing process.
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Fabrication and characterization of CuInS2 films by chemical bath deposition in acid conditions
TL;DR: In this paper, non-crystalline copper indium disulphide (CuInS2) thin films were obtained after sulfuration in sulfur atmosphere at 450 °C for 1.5 h.