There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

In this critical review, metal oxides-based materials for electrochemical supercapacitor (ES) electrodes are reviewed in detail together with a brief review of carbon materials and conducting polymers. Their advantages, disadvantages, and performance in ES electrodes are discussed through extensive analysis of the literature, and new trends in material development are also reviewed. Two important future research directions are indicated and summarized, based on results published in the literature: the development of composite and nanostructured ES materials to overcome the major challenge posed by the low energy density of ES (476 references).

/pdf/a-review-of-electrode-materials-for-electrochemical-2cok5em0bo.pdf

A review of electrode materials for electrochemical supercapacitors

1. Introduction 20642. Synthesis of Magnetic Nanoparticles 20662.1. Classical Synthesis by Coprecipitation 20662.2. Reactions in Constrained Environments 20682.3. Hydrothermal and High-TemperatureReactions20692.4. Sol-Gel Reactions 20702.5. Polyol Methods 20712.6. Flow Injection Syntheses 20712.7. Electrochemical Methods 20712.8. Aerosol/Vapor Methods 20712.9. Sonolysis 20723. Stabilization of Magnetic Particles 20723.1. Monomeric Stabilizers 20723.1.1. Carboxylates 20733.1.2. Phosphates 20733.2. Inorganic Materials 20733.2.1. Silica 20733.2.2. Gold 20743.3. Polymer Stabilizers 20743.3.1. Dextran 20743.3.2. Polyethylene Glycol (PEG) 20753.3.3. Polyvinyl Alcohol (PVA) 20753.3.4. Alginate 20753.3.5. Chitosan 20753.3.6. Other Polymers 20753.4. Other Strategies for Stabilization 20764. Methods of Vectorization of the Particles 20765. Structural and Physicochemical Characterization 20785.1. Size, Polydispersity, Shape, and SurfaceCharacterization20795.2. Structure of Ferro- or FerrimagneticNanoparticles20805.2.1. Ferro- and Ferrimagnetic Nanoparticles 20805.3. Use of Nanoparticles as Contrast Agents forMRI20825.3.1. High Anisotropy Model 20845.3.2. Small Crystal and Low Anisotropy EnergyLimit20855.3.3. Practical Interests of Magnetic NuclearRelaxation for the Characterization ofSuperparamagnetic Colloid20855.3.4. Relaxation of Agglomerated Systems 20856. Applications 20866.1. MRI: Cellular Labeling, Molecular Imaging(Inﬂammation, Apoptose, etc.)20866.2.

Magnetic Iron Oxide Nanoparticles: Synthesis, Stabilization, Vectorization, Physicochemical Characterizations, and Biological Applications

[Liu, Chang; Li, Feng; Ma, Lai-Peng; Cheng, Hui-Ming] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China.;Cheng, HM (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China;cheng@imr.ac.cn

Advanced Materials for Energy Storage

Copper Precipitates in Multicrystalline Silicon for Solar Cells

Luminescence and photoconductivity properties of porous polycrystalline silicon

The effect of rapid thermal process (RTP) on oxygen precipitation in heavily boron-doped (HB) Czochralski (CZ) silicon (Si) wafers has been investigated. After RTP preannealing at high temperature, it was found that, contrary to lightly boron-doped (LB) silicon, a denuded zone (DZ) was not formed in the HB silicon. The oxygen precipitates and extended defects generated in the HB Si samples were smaller than those generated in the LB Si samples. It is considered that DZ formation by means of RTP may not be suitable for HB CZ silicon.

http://iopscience.iop.org/article/10.1143/JJAP.42.7290/pdf

Effect of rapid thermal process on oxygen precipitation in heavily boron-doped Czochralski silicon wafer

The invention discloses a heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell, which comprises a plurality of cells; and each cell is provided with an aluminium electrode layer, a first silicon nitride layer, a first silicon dioxide layer, a heavily-doped UMG silicon layer, a lightly-doped silicon epitaxy layer, a second silicon dioxide layer, a second silicon nitride layer and a plurality of heavily-doped areas from bottom to top in turn, wherein the conduction type of the lightly-doped silicon epitaxy layer is the same as that of the heavily-doped UMG silicon layer; the conduction type of the heavily-doped areas is opposite to that of the heavily-doped UMG silicon layer; and the upper surfaces of the heavily-doped areas and the upper surface of the second silicon nitride layer are provided with silver electrodes. The invention also provides a preparation method for the solar cell. A low-cost UMG silicon material is utilized, heavily-doped UMG silicon crystals are grown by the heavy doping technology, and the heavily-doped UMG silicon crystals are epitaxially grown to form a high-quality silicon film so as to prepare the solar cell, so the cost of the solar cell is much lower than that of a solar cell prepared from a high-quality silicon material directly, and the photoelectric conversion efficiency is much higher than that of a solar cell prepared from a lightly-doped UMG silicon material directly.

Heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell and preparation method

In this paper, an organic stabilized and dispersive Cu nanowires (NWs) ink was proposed. We investigated and determined the recipe of the expectant ink framework and proved its usage as flexible transparent conductive films. The influences of main solutes on stability and dispersity of the ink were discussed detailedly. The stability was evaluated by the sedimentation time of the ink and the dispersity was weighed by the morphology of the freely-dispersed Cu NWs ink on substrates. The electric properties of the following conductive films were obatained by Hall effect measurement system. A simple and efficient method has carried out for fabricating the transparent electrodes from the prepared Cu NWs ink. These electrodes possessed a good performance in both conductivity and transmittance, which verified the pragmaticality of suggested Cu NWs ink as well. Typically, the sheet resistances of the processed electrodes made by the plasma enhanced chemical vapor deposition technique were about 80 Ω·sq−1, and the light transmittances at 550 nm were over 80%. The figures of merit of them were over 10−3 Ω−1.

Deren Yang

Papers

Copper Precipitates in Multicrystalline Silicon for Solar Cells

Luminescence and photoconductivity properties of porous polycrystalline silicon

Effect of rapid thermal process on oxygen precipitation in heavily boron-doped Czochralski silicon wafer

Heavily-doped UMG silicon epitaxially generated high-low junction-based solar cell and preparation method

Fabrication of stabilized and dispersive copper nanowires ink