D
Deren Yang
Researcher at Zhejiang University
Publications - 998
Citations - 26247
Deren Yang is an academic researcher from Zhejiang University. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 71, co-authored 944 publications receiving 22268 citations. Previous affiliations of Deren Yang include Zhejiang Sci-Tech University.
Papers
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Effects of n-butyl amine incorporation on the performance of perovskite light emitting diodes.
Lingbo Xu,Qiang Yaping,Qiang Yaping,Haihua Hu,Ping Lin,Peng Wang,Siyuan Che,Hao Sun,Zhiwei Nie,Can Cui,Can Cui,Fengmin Wu,Deren Yang,Xuegong Yu +13 more
TL;DR: N-butyl amine is introduced to modulate the growth of perovskite films as well as improve the performance of PeLEDs, and the results indicate that BA would terminate the grain surface and inhibit crystal growth, leading to increased radiative recombination.
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Thermal nitridation kinetics of silicon wafers in nitrogen atmosphere during annealing
TL;DR: In this paper, the surface properties of annealed silicon wafers were investigated by means of X-ray photoelectron spectroscopy and optical microscopy, and the maximum thickness was about 50 nm.
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Silicon nano-wires fabricated by a novel thermal evaporation of zinc sulfide
Junjie Niu,Jian Sha,Deren Yang +2 more
TL;DR: In this article, a sulfide-assisted growth model of silicon nano-wires (SiNWs) with diameter of ∼30 nm and length of tens of micrometers on silicon wafers was suggested.
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Effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon
TL;DR: In this paper, the effect of carbon doping on oxygen precipitation behavior in internal gettering processing for Czochralski silicon (Cz-Si) has been investigated, and it has been shown that both good-quality denuded zone and high-density bulk microdefects (BMDs) could be formed in high carbon content (H[C]) CZ-Si wafer.
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Ultraviolet-visible electroluminescence from metal-oxide-semiconductor devices with CeO2 films on silicon
TL;DR: In this article, ultraviolet-visible (UV-Vis) electroluminescence (EL) from metaloxide-semiconductor (MOS) devices with the CeO2 films annealed at low temperatures is reported.