There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

In this critical review, metal oxides-based materials for electrochemical supercapacitor (ES) electrodes are reviewed in detail together with a brief review of carbon materials and conducting polymers. Their advantages, disadvantages, and performance in ES electrodes are discussed through extensive analysis of the literature, and new trends in material development are also reviewed. Two important future research directions are indicated and summarized, based on results published in the literature: the development of composite and nanostructured ES materials to overcome the major challenge posed by the low energy density of ES (476 references).

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A review of electrode materials for electrochemical supercapacitors

1. Introduction 20642. Synthesis of Magnetic Nanoparticles 20662.1. Classical Synthesis by Coprecipitation 20662.2. Reactions in Constrained Environments 20682.3. Hydrothermal and High-TemperatureReactions20692.4. Sol-Gel Reactions 20702.5. Polyol Methods 20712.6. Flow Injection Syntheses 20712.7. Electrochemical Methods 20712.8. Aerosol/Vapor Methods 20712.9. Sonolysis 20723. Stabilization of Magnetic Particles 20723.1. Monomeric Stabilizers 20723.1.1. Carboxylates 20733.1.2. Phosphates 20733.2. Inorganic Materials 20733.2.1. Silica 20733.2.2. Gold 20743.3. Polymer Stabilizers 20743.3.1. Dextran 20743.3.2. Polyethylene Glycol (PEG) 20753.3.3. Polyvinyl Alcohol (PVA) 20753.3.4. Alginate 20753.3.5. Chitosan 20753.3.6. Other Polymers 20753.4. Other Strategies for Stabilization 20764. Methods of Vectorization of the Particles 20765. Structural and Physicochemical Characterization 20785.1. Size, Polydispersity, Shape, and SurfaceCharacterization20795.2. Structure of Ferro- or FerrimagneticNanoparticles20805.2.1. Ferro- and Ferrimagnetic Nanoparticles 20805.3. Use of Nanoparticles as Contrast Agents forMRI20825.3.1. High Anisotropy Model 20845.3.2. Small Crystal and Low Anisotropy EnergyLimit20855.3.3. Practical Interests of Magnetic NuclearRelaxation for the Characterization ofSuperparamagnetic Colloid20855.3.4. Relaxation of Agglomerated Systems 20856. Applications 20866.1. MRI: Cellular Labeling, Molecular Imaging(Inﬂammation, Apoptose, etc.)20866.2.

Magnetic Iron Oxide Nanoparticles: Synthesis, Stabilization, Vectorization, Physicochemical Characterizations, and Biological Applications

[Liu, Chang; Li, Feng; Ma, Lai-Peng; Cheng, Hui-Ming] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China.;Cheng, HM (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, 72 Wenhua Rd, Shenyang 110016, Peoples R China;cheng@imr.ac.cn

Advanced Materials for Energy Storage

One-Dimensional Nanostructures of Silicon: Synthesis, Characterization and Applications

Carrier Injection and Annealing‐Enhanced Electrical Performance in Tunnel Oxide‐Passivated Contact Silicon Solar Cells

The invention discloses a method for introducing dislocation on a silicon chip. The surface of the silicon chip is radiated by energy beams enough to damage silicon lattices; density-controlled dislocation is introduced into the radiated area; the density of the dislocation is controlled by the intensity of the energy beams, and the density of the introduced dislocation is higher when the energy is stronger; the dislocation can be positioned on the surface of the silicon chip or in the silicon chip; and the energy beams can be electron beams, ion beams, electromagnetic wave beams, alpha X-ray beams, neutron beams or photon beams. The method introduces the controllable dislocation on the silicon chip, is simple and convenient to operate, is well compatible with the conventional integrated circuit process, has the advantages of no damage or contamination to the silicon chip, strong controllability and high repeatability, and is favorable for large-scale industrial production.

Method for introducing dislocation on silicon chip

Beta-phase gallium oxide (β-Ga2O3) bulk single crystal has received increasing attentions due to their fantastic performances and widespread use in power devices and solar-blind photodetectors. Wet etching has proved to...

Wet Etching in β-Ga2O3 Bulk Single Crystal

Porous silicon samples were treated with the rapid thermal process (RTP) under different circumstances (N2, Ar, O2 and Air). Before and after treatments, the samples were checked by means of photoluminescence (PL) spectroscopy and Fourier transform infrared spectroscopy (FTIR). Four blue light emission peaks were found in the PL spectra of porous silicon samples subjected to the RTP treatments at temperatures above 400°C. The peak positions were found not to vary with the circumstances and temperatures of RTP treatments. It is considered that due to oxidation during the RTP treatments, the pole size of Si crystal in porous silicon decreased, resulting in the blue shift of light emission. Correlated with the Si crystal sizes discontinuous hypothesis and previous researchers’ theory calculation, the PL peak positions did not vary with the RTP temperature and circumstances.

Deren Yang

Papers

One-Dimensional Nanostructures of Silicon: Synthesis, Characterization and Applications

Carrier Injection and Annealing‐Enhanced Electrical Performance in Tunnel Oxide‐Passivated Contact Silicon Solar Cells

Method for introducing dislocation on silicon chip

Wet Etching in β-Ga2O3 Bulk Single Crystal

Blue light emission of porous silicon subjected to RTP treatments