D
Deren Yang
Researcher at Zhejiang University
Publications - 998
Citations - 26247
Deren Yang is an academic researcher from Zhejiang University. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 71, co-authored 944 publications receiving 22268 citations. Previous affiliations of Deren Yang include Zhejiang Sci-Tech University.
Papers
More filters
Journal ArticleDOI
Extended defects in nitrogen-doped Czochralski silicon during diode process
TL;DR: In this paper, the extended defects in nitrogen-doped Czochralski (NCZ) and conventional CZochralki (CZ) silicon during the diode process were systematically investigated by means of optical microscopy and transmission electron microscopy.
Journal ArticleDOI
Monocrystalline silicon used for integrated circuits:still on the way
TL;DR: In this paper, the recent developments in the controlling of large diameter silicon crystal growth processes, the improvement of material features by co-doping with the intend-introduced impurities, and the progress of defect engineered silicon wafers (epitaxial silicon wafer, strained silicon, silicon on insulator) are reviewed.
Journal ArticleDOI
Formation of shallow junctions in gallium and phosphorus compensated silicon for cell performance improvement
TL;DR: In this article, the authors used gallium and phosphorus compensated Czochralski silicon wafer and found that the cell efficiencies under 1 sun illumination are on average 0.2% higher than those of conventional solar cells.
Journal ArticleDOI
Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment
Krzysztof Wieteska,Andrzej Misiuk,M. Prujszczyk,Wojciech Wierzchowski,Barbara Surma,J. Bąk-Misiuk,P. Romanowski,A. Shalimov,I. Capan,Deren Yang,W. Graeff +10 more
TL;DR: In this paper, the authors proposed a method to solve the problem of high energy consumption in the case of a nuclear power plant in Warsaw, Poland, by using an energy-efficient particle accelerator.
Journal ArticleDOI
Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon
TL;DR: In this paper, defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide-semiconductor (MOS) devices.