D
Deren Yang
Researcher at Zhejiang University
Publications - 998
Citations - 26247
Deren Yang is an academic researcher from Zhejiang University. The author has contributed to research in topics: Silicon & Doping. The author has an hindex of 71, co-authored 944 publications receiving 22268 citations. Previous affiliations of Deren Yang include Zhejiang Sci-Tech University.
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Surface plasmon enhanced light emission of silicon-rich silicon nitride: Dependence on metal island size
TL;DR: In this paper, surface plasmon coupled light emission of silicon-rich silicon nitride (SRSN) was investigated as a function of metal island size, and it was found that the emission intensity was enhanced by SP and the enhancement factors increase greatly with the increase of the island size.
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Effects of Iron Contamination and Hydrogen Passivation on the Electrical Properties of Oxygen Precipitates in CZ-Si
TL;DR: In this paper, the characteristics of oxygen precipitation in n-type CZ-Si are systematically investigated by means of Fourier transform infrared spectroscopy (FTIR), deep level transient spectrograms (DLTS) and electron beam induced current (EBIC).
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On the resistivity increase of heavily doped n-type Si by rapid thermal processing
TL;DR: In this paper, the resistivity change of heavily doped n-type Si by rapid thermal annealing is studied and the observed resistivity increase can be explained by dopant deactivation due to vacancy trapping by the dopant atoms.
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Iron precipitation in as-received Czochralski silicon during low temperature annealing
TL;DR: In this paper, the iron precipitation in as-received Czochralski (CZ) silicon during low temperature from 300 to 700 °C was investigated, and it was shown that the iron could form small precipitates even at low concentration.
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Study of photoconductivity and photoluminescence of organic/porous silicon complexes
TL;DR: In this article, the photoluminescence (PL) of different complexes was studied and the physical origin of PL may be related to the recombination mechanisms involving surface defect states such as silicon oxide, siloxene.