G
Gerald Lucovsky
Researcher at North Carolina State University
Publications - 324
Citations - 10085
Gerald Lucovsky is an academic researcher from North Carolina State University. The author has contributed to research in topics: Dielectric & Thin film. The author has an hindex of 50, co-authored 324 publications receiving 9826 citations. Previous affiliations of Gerald Lucovsky include University of North Carolina at Chapel Hill.
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Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition
TL;DR: In this paper, the local atomic structure of silicon suboxide (SiOx, x < 2) thin films using infrared (IR) spectroscopy was studied using PECVD of silane (SiH4) and nitrous oxide (N2O) mixtures, which were then diluted with He.
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Raman scattering characterization of carbon bonding in diamond and diamondlike thin films
TL;DR: In this article, the atomic bonding configurations of carbon bonding in diamond and diamond-like thin films are explored using Raman scattering, and the general aspects of Raman scatter from composites are presented.
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Origin of Charge Density at LaAlO3 on SrTiO3 Heterointerfaces: Possibility of Intrinsic Doping
Wolter Siemons,Wolter Siemons,Gertjan Koster,Hideki Yamamoto,Hideki Yamamoto,Walter A. Harrison,Gerald Lucovsky,Theodore H. Geballe,Dave H. A. Blank,M. R. Beasley +9 more
TL;DR: Based on transport, spectroscopic, and oxygen-annealing experiments, it is concluded that extrinsic defects in the form of oxygen vacancies introduced by the pulsed laser deposition process used by all researchers to date to make these samples is the source of the large carrier densities.
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Low‐temperature growth of silicon dioxide films: A study of chemical bonding by ellipsometry and infrared spectroscopy
TL;DR: In this paper, a spectroscopic study using the techniques of ellipsometry and infrared (IR) absorption spectroscopy of the chemical bonding in silicon dioxide (SiO2) films grown in dry oxygen ambients at temperatures between 550 and 1000°C was presented.
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Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry
Seung Gu Lim,Stas Kriventsov,Thomas N. Jackson,J. H. Haeni,Darrell G. Schlom,A.M. Balbashov,Reinhard Uecker,P. Reiche,John L. Freeouf,Gerald Lucovsky +9 more
TL;DR: In this paper, a far ultraviolet (UV) spectroscopic ellipsometer system working up to 9 eV has been developed, and applied to characterize high-K-dielectric materials.