Guido Groeseneken

TL;DR: In this article, a new and accurate approach to charge-pumping measurements for the determination of the Si-SiO 2 interface state density directly on MOS transistors is presented.

TL;DR: In this paper, a percolation-based model for intrinsic breakdown in thin oxide layers is proposed, which can explain the experimentally observed statistical features of the breakdown distribution, such as the increasing spread of the Q/sub BD/-distribution for ultrathin oxides.

TL;DR: In this article, a charge pumping technique is used to determine the degradation mechanisms in MOS transistors under all kinds of aging conditions (e.g., irradiation, hot-carrier, Fowler-Nordheim stress) and to quantify the degradation.

TL;DR: In this article, the degradation behavior of n-channel transistors under alternating injection conditions is discussed and fully explained based on the static stress degradation model for both channel types using the charge-pumping technique.

TL;DR: In this article, the authors generalized the tunnel field effect transistor configuration by allowing a shorter gate structure, which is especially attractive for vertical nanowire-based transistors, and demonstrated with device simulations that the more flexible configuration allows of the reduction of ambipolar behavior, the increase of switching speed, and the decrease of processing complexity.