J
Jean Massies
Researcher at Centre national de la recherche scientifique
Publications - 459
Citations - 11447
Jean Massies is an academic researcher from Centre national de la recherche scientifique. The author has contributed to research in topics: Molecular beam epitaxy & Photoluminescence. The author has an hindex of 53, co-authored 458 publications receiving 11005 citations. Previous affiliations of Jean Massies include Alcatel-Lucent.
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Temperature quenching of photoluminescence intensities in undoped and doped gan
Mathieu Leroux,Nicolas Grandjean,Bernard Beaumont,Gilles Nataf,Fabrice Semond,Jean Massies,Pierre Gibart +6 more
TL;DR: In this paper, the temperature behavior of various photoluminescence (PL) transitions observed in undoped, n-and p-doped GaN in the 9-300 K range is discussed.
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Quantum confined Stark effect due to built-in internal polarization fields in (Al,Ga)N/GaN quantum wells.
Mathieu Leroux,Nicolas Grandjean,M. Laügt,Jean Massies,Bernard Gil,Pierre Lefebvre,Pierre Bigenwald +6 more
TL;DR: In this paper, the authors show that the origin of the electric field is predominently due to spontaneous polarization effects rather than a piezoelectric effect in the well material and conclude that the GaN layers are nearly unstrained, whereas the (AI,Ga)N barriers are pseudomorphically strained on GaN.
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From visible to white light emission by GaN quantum dots on Si(111) substrate
TL;DR: In this paper, the growth of GaN in an AlN matrix has been investigated in situ by reflection high-energy electron diffraction, and it is found that a growth interruption performed at GaN thicknesses larger than three molecular monolayers (8 A) instantaneously leads to the formation of three-dimensional islands.
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Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
TL;DR: In this article, the role of the sample structure geometry on the electric field is exemplified by changing the thickness of the AlGaN barriers in multiple-QW structures and electrostatic arguments well account for the overall trends of the electric-field variations.
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High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
Pierre Lefebvre,A Morel,Mathieu Gallart,Thierry Taliercio,Jacques Allègre,Bernard Gil,Henry Mathieu,Benjamin Damilano,Nicolas Grandjean,Jean Massies +9 more
TL;DR: In this paper, a graded-width InGaN/GaN quantum well was used to study a time-resolved photoluminescence (PL) at T = 8 K, where the well width continuously varies from ∼5.5 to 2.0 nm.