Journal ArticleDOI
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
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TLDR
In this article, the role of the sample structure geometry on the electric field is exemplified by changing the thickness of the AlGaN barriers in multiple-QW structures and electrostatic arguments well account for the overall trends of the electric-field variations.Abstract:
AlGaN/GaN quantum well (QW) structures are grown on c-plane sapphire substrates by molecular beam epitaxy. Control at the monolayer scale of the well thickness is achieved and sharp QW interfaces are demonstrated by the low photoluminescence linewidth. The QW transition energy as a function of the well width evidences a quantum-confined Stark effect due to the presence of a strong built-in electric field. Its origin is discussed in terms of piezoelectricity and spontaneous polarization. Its magnitude versus the Al mole fraction is determined. The role of the sample structure geometry on the electric field is exemplified by changing the thickness of the AlGaN barriers in multiple-QW structures. Straightforward electrostatic arguments well account for the overall trends of the electric-field variations.read more
Citations
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Journal ArticleDOI
Band parameters for III–V compound semiconductors and their alloys
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI
Band parameters for nitrogen-containing semiconductors
Igor Vurgaftman,Jerry R. Meyer +1 more
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Journal ArticleDOI
Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures
TL;DR: In this paper, the nonlinear polarization for nitride alloys of arbitrary composition was calculated, and the bound sheet charge induced by polarization discontinuity at the interfaces between different alloy and binary (epi) layers.
Journal ArticleDOI
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Raphaël Butté,J.-F. Carlin,Eric Feltin,M. Gonschorek,Sylvain Nicolay,Gabriel Christmann,D. Simeonov,A. Castiglia,J. Dorsaz,H. J. Buehlmann,Stavros Christopoulos,G. Baldassarri Höger von Högersthal,A. J. D. Grundy,Mauro Mosca,Mauro Mosca,C. Pinquier,C. Pinquier,M. A. Py,F. Demangeot,J. Frandon,Pavlos G. Lagoudakis,Jeremy J. Baumberg,Nicolas Grandjean +22 more
TL;DR: In this paper, the structural and optical properties of lattice-matching AlInN layers to GaN have been investigated and their specific use to realize nearly strain-free structures for photonic and electronic applications has been discussed.
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Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices
TL;DR: In this article, the materials and growth issues unique to high-performance nonpolar and semipolar light-emitting devices grown on high-quality free-standing GaN substrates and provide an outlook for the opportunities and challenges that lie ahead.
References
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Journal ArticleDOI
Spontaneous polarization and piezoelectric constants of III-V nitrides
TL;DR: In this paper, the spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Electric polarization as a bulk quantity and its relation to surface charge
TL;DR: It is shown that the polarization as defined above also has a direct and predictive relationship to the surface charge which accumulates at an insulating surface or interface.
Journal ArticleDOI
Valence‐band discontinuities of wurtzite GaN, AlN, and InN heterojunctions measured by x‐ray photoemission spectroscopy
TL;DR: In this paper, the valence band discontinuities at various wurtzite GaN, AlN, and InN heterojunctions were measured by means of x-ray photoemission spectroscopy.
Journal ArticleDOI
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
Tetsuya Takeuchi,Christian Wetzel,Shigeo Yamaguchi,Hiromitsu Sakai,Hiroshi Amano,Isamu Akasaki,Yawara Kaneko,Shigeru Nakagawa,Yoshifumi Yamaoka,Norihide Yamada +9 more
TL;DR: In this article, the piezoelectric field points from the growth surface to the substrate and its magnitude is 1.2 MV/cm for Ga0.84In0.16N/GaN quantum wells on sapphire substrate.