N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Ultrafast Zn-Diffusion and Oxide-Relief 940 nm Vertical-Cavity Surface-Emitting Lasers Under High-Temperature Operation
Chen-Lung Cheng,Nikolai N. Ledentsov,Zuhaib Khan,Jia-Liang Yen,Nikolay N. Ledentsov,Jin-Wei Shi +5 more
TL;DR: In this paper, the authors demonstrate 940-nm vertical-cavity surface-emitting lasers (VCSELs) with record-high −3dB electrical-to-optical bandwidths of 40 and 32 GHz under room-temperature and 85°C operations, respectively.
Journal ArticleDOI
Decreasing parasitic capacitance in vertical-cavity surface-emitting laser with selectively oxidized aperture
A. M. Nadtochiy,A. M. Nadtochiy,S. A. Blokhin,S. A. Blokhin,A. G. Kuzmenkov,A. G. Kuzmenkov,M. V. Maksimov,M. V. Maksimov,Nikolai A. Maleev,Nikolai A. Maleev,S. I. Troshkov,S. I. Troshkov,Nikolai N. Ledentsov,Nikolai N. Ledentsov,V. M. Ustinov,V. M. Ustinov,A. Mutig,A. Mutig,Dieter Bimberg,Dieter Bimberg +19 more
TL;DR: In this paper, a comparative study of the structural parameters and the static and dynamic characteristics of vertical-cavity surface-emitting laser (VCSEL) with micro-resonators based on Al0.8Ga0.85As and Al 0.15Ga 0.2As is presented.
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New-generation vertically emitting lasers as a key factor in the computer communication era
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Long-term stability of long-wavelength (>1.25 µm) quantum-dot lasers fabricated on GaAs substrates
E. Yu. Lundina,Yu. M. Shernyakov,M. V. Maksimov,I. N. Kayander,A. F. Tsatsul’nikov,Nikolai N. Ledentsov,A. E. Zhukov,Nikolai A. Maleev,S. S. Mikhrin,V. M. Ustinov,Zh. I. Alferov,Dieter Bimberg +11 more
TL;DR: In this article, an accelerated degradation testing of long-wavelength (>1.25 µm) quantum-dot laser made on GaAs substrates is carried out at a fixed current of 1.7 A, initial optical output of about 0.3 W, and a heat sink temperature of 60°C.
Journal ArticleDOI
Gain characteristics of quantum-dot injection lasers
A. E. Zhukov,A. R. Kovsh,V. M. Ustinov,A. Yu. Egorov,Nikolai N. Ledentsov,A. F. Tsatsul’nikov,M. V. Maksimov,Sergey V. Zaitsev,Yu. M. Shernyakov,A. V. Lunev,P. S. Kop’ev,Zh. I. Alferov,Dieter Bimberg +12 more
TL;DR: In this paper, the current dependence of the optical gain in laser-based self-organized InGaAs quantum dots in a AlGaAs/GaAs matrix is investigated experimentally.