Nikolai N. Ledentsov

TL;DR: In this article, the authors proposed a quantum dot (QD) heterostructures with dimensionality lower than two in semiconductor lasers, which can be used to extend the basic principles of heterostructure lasers and achieve high power operation, record low threshold current densities, strongly reduced chirp and extension of the wavelength range on GaAs substrates.

TL;DR: In this article, a multilayer structure of InGaAs/GaAs quantum dots fabricated by sub-monolayer migration stimulated epitaxy has been studied experimentally by scanning tunneling microscopy and results clearly show that ordering of nanoobjects into rows occurs in InAs/InGaAs heteroepitaxial layers.

TL;DR: In this paper, the optical properties of structures with InAs islands and narrow GaAs quantum wells in an AlGaAs host have been investigated and the effect of an exciton waveguide and the onset of lasing due to optical pumping in the red spectral range are demonstrated in structures without external optical confinement by layers with a lower refractive index.

TL;DR: In this article, a comparative study of the internal quantum yield of AlGaAs/GaAs photovoltaic converters with variable position of the array of vertically coupled InGaAs quantum dots (QDs) is presented.

TL;DR: In this article , a multi-aperture single mode 850nm VCSEL with optical modulation bandwidth exceeding 30GHz and narrow optical spectrum width enabling long distance high-speed data transmission exceeding 800m over OM4 multi-mode fiber.