N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Optical studies of asymmetric-waveguide submonolayer InGaAs QD microdisks formed by selective oxidation
Sergey A. Blokhin,N. V. Kryzhanovskaya,A. G. Gladyshev,Nikolai A. Maleev,A. G. Kuzmenkov,E. M. Arakcheeva,E. M. Tanklevskaya,A. E. Zhukov,A. P. VasilEx,Elizaveta Semenova,Mikhail V. Maximov,Nikolai N. Ledentsov,V. M. Ustinov,E. Stock,Dieter Bimberg +14 more
TL;DR: In this article, an asymmetric waveguide formed by selective oxidation was achieved under optical pumping in the temperature range 5 − 180 K. The experimentally determined quality factor Q of a microdisk cavity is no less than 104.
Proceedings ArticleDOI
Adaptive optical interconnects: the ADDAPT project
Ronny Henker,Jan Pliva,Mahdi Khafaji,Frank Ellinger,Thomas Toifl,Bert Jan Offrein,Alessandro Cevrero,Ilter Oezkaya,Marc Seifried,Nikolai N. Ledentsov,Joerg-R. Kropp,Vitaly Shchukin,Martin Zoldak,Leos Halmo,Jaroslaw P. Turkiewicz,W. Meredith,Iain Eddie,Michael Georgiades,Savvas Charalambides,Jeroen Antonius Maria Duis,Pieter van Leeuwen +20 more
TL;DR: A novel approach of implementing performance and power adaptivity from system down to optical device, electrical circuit and transistor level is proposed to enable flexible energy-efficient optical transmission links which pave the way for massive reductions of CO2 emission and operating costs in data center and high performance computing applications.
Journal ArticleDOI
Dynamic properties of AlGaAs vertical cavity surface emitting lasers with active region based on submonolayer InAs insertions
A. M. Nadtochiy,A. M. Nadtochiy,S. A. Blokhin,S. A. Blokhin,Alex Mutig,James A. Lott,Nikolai N. Ledentsov,L. Ya. Karachinskiy,L. Ya. Karachinskiy,Mikhail V. Maximov,Mikhail V. Maximov,V. M. Ustinov,D. Bimber +12 more
TL;DR: In this paper, it was shown that the use of submonolayer InAs insertions as an active region of AlGaAs vertical cavity surface emitting lasers makes it possible to attain resonant frequencies as high as 17 GHz.
Journal ArticleDOI
Coulomb Interaction between Carriers Localized in InAs/GaAs Quantum Dots and on Point Defects
M. M. Sobolev,A. R. Kovsh,V. M. Ustinov,A.Yu. Egorov,A. E. Zhukov,Mikhail V. Maximov,Nikolai N. Ledentsov +6 more
Journal ArticleDOI
Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
Nikolai A. Maleev,A. E. Zhukov,A. R. Kovsh,S. S. Mikhrin,V. M. Ustinov,D. A. Bedarev,B. V. Volovik,I. L. Krestnikov,I. N. Kayander,V. A. Odnoblyudov,Alexandra Suvorova,A. F. Tsatsul’nikov,Yu. M. Shernyakov,Nikolai N. Ledentsov,P. S. Kop’ev,Zh. I. Alferov,Dieter Bimberg +16 more
TL;DR: In this paper, a method for growing stacked stacked InAs/InGaAs self-organized quantum dots on GaAs substrates is proposed, which allows fabrication of structures exhibiting intense and narrow-line photoluminescence in the 1.3 µm wavelength region.