N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices
I. L. Krestnikov,V. V. Lundin,A. V. Sakharov,D. A. Bedarev,E. E. Zavarin,Yu. G. Musikhin,N. M. Shmidt,A. F. Tsatsul’nikov,A. S. Usikov,Nikolai N. Ledentsov,Zhores I. Alferov +10 more
Journal ArticleDOI
Leakage-Assisted Transverse Mode Selection in Vertical-Cavity Surface-Emitting Lasers With Thick Large-Diameter Oxide Apertures
TL;DR: In this paper, 3D transverse-vertical modes of 850 nm GaAs/AlGaAs vertical-cavity surface-emitting lasers with thick oxide aperture layers were simulated.
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Metamorphic modulation-doped InAlAs/InGaAs/InAlAs heterostructures with high electron mobility grown on gaas substrates
Elizaveta Semenova,A. E. Zhukov,A. P. Vasil’ev,S. S. Mikhrin,A. R. Kovsh,V. M. Ustinov,Yu. G. Musikhin,Sergey A. Blokhin,A. G. Gladyshev,Nikolai N. Ledentsov +9 more
TL;DR: In this paper, the electron mobility in the 2D channel of metamorphic structures grown under optimum conditions (8100 cm2/V s at 300 K) noticeably exceeds the values achievable in strained InGaAs/AlGaAs heterostructures on GaAs substrates.
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Lateral association of vertically-coupled quantum dots
A. F. Tsatsul’nikov,M. V. Belousov,N. A. Bert,A. Yu. Egorov,P. S. Kop’ev,A. R. Kovsh,I. L. Krestnikov,Nikolai N. Ledentsov,Mikhail V. Maximov,Alexandra Suvorova,V. M. Ustinov,B. V. Volovik,A. E. Zhukov,Marius Grundmann,Dieter Bimberg,Zh. I. Alferov +15 more
TL;DR: In this paper, the structural and optical properties of vertically coupled In0.5 Ga 0.5 As quantum dots (QDs) in a GaAs matrix with a large number of QD stacks has been studied.
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Barrier-disorder induced exciton relaxation via LO-phonons in GaAs/AlxGa1−xAs multiple quantum wells
TL;DR: In this article, the photolumnescence excitation spectra of the localized exciton emission at low temperatures and excitation densities are composed of narrow equidistant peaks exactly separated by the GaAs LO-phonon energy (36 meV).