N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
More filters
Proceedings ArticleDOI
Fabry-Perot and vertical cavity surface emitting InAs quantum dot lasers
Dieter Bimberg,Nikolai N. Ledentsov,Marius Grundmann,Frank Heinrichsdorff,V. M. Ustinov,P. S. Kop’ev,Zh. I. Alferov,James A. Lott +7 more
TL;DR: In this paper, a self-organized growth approach was used to achieve high internal and differential efficiencies for InGaAs-AlGaAs lasers based on vertically coupled QDs and RT 1 W continuous wave operation.
Book ChapterDOI
New Generation of Vertical-Cavity Surface-Emitting Lasers for Optical Interconnects
TL;DR: In this article, the authors investigate oxide-confined, leaky-design VCSELs and observe the characteristic leakage effect induced features in the vertical far field pattern of the device.
Journal ArticleDOI
Variable-angle optical reflectivity and angle-resolved photoluminescence studies of 2d active photonic crystal based on quantum dots
S. A. Blokhin,Mikhail V. Maximov,O. A. Usov,A. V. Nashchekin,E. M. Arakcheeva,E. M. Tanklevskaya,S. A. Gurevich,S. G. Konnikov,A. E. Zhukov,Nikolai N. Ledentsov,V. M. Ustinov +10 more
TL;DR: In this paper, a two-dimensional photonic crystal with hexagonal lattice of air-holes is patterned into an active planar waveguide containing InAs/InGaAs quantum dots.
Journal ArticleDOI
Dichroism in Transmission of Light by an Array of Self-Assembled GaAs Quantum Wires on a Nanofaceted A(311) Surface
Vladimir A. Volodin,M. D. Efremov,R. S. Matvienko,V. V. Preobrazhenskii,B. R. Semyagin,Nikolai N. Ledentsov,I. R. Soshnikov,Dimitri Litvinov,Andreas Rosenauer,Dagmar Gerthsen +9 more
TL;DR: In this paper, it is assumed that the observed effect is associated with the structural anisotropy, i.e., with the formation of an array of GaAs quantum wires.
Proceedings ArticleDOI
Edge- and Surface-Emitting Lasers Applying TM Mode Confined at the Distributed Bragg Reflector-Air Interface
TL;DR: Mapping of the VCSEL wafers in areas with the variable aperture diameters shows non-monotonous behavior of side mode suppression ratio (SMRS) between the fundamental and the excited mode versus $D oscillating in the range from 7 dB to ∼30 dB with three clearly revealed maxima in the SMSR at particular aperture diameter.