N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Patent
Data transmission optoelectric device
TL;DR: In this paper, an optoelectronic data transmission device has an active section with an active element that generates an optical gain if a forward bias is applied, and an absorption section.
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Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
Zhao Zhen,D. A. Bedarev,B. V. Volovik,Nikolai N. Ledentsov,A. V. Lunev,M. V. Maksimov,A. F. Tsatsul’nikov,A. Yu. Egorov,A. E. Zhukov,A. R. Kovsh,V. M. Ustinov,P. S. Kop’ev +11 more
TL;DR: In this paper, the optical properties of structures containing InGaAs quantum dots in GaAs and AlGaAs matrices grown by molecular-beam epitaxy are investigated, and it is shown that increasing the In content in the quantum dots has the effect of raising the energy of carrier localization and increasing the energy distance between the ground state and the excited states of quantum dots.
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Comparative Analysis of Long-Wavelength (1.3 µm) VCSELs on GaAs Substrates
Nikolai A. Maleev,A. Yu. Egorov,A. E. Zhukov,A. R. Kovsh,A. P. Vasil’ev,V. M. Ustinov,Nikolai N. Ledentsov,Zh. I. Alferov +7 more
TL;DR: In this paper, the relationship between the active region properties and optical microcavity parameters required for lasing was investigated, and a comparative analysis of VCSELs with active regions based on InAs/InGaAs quantum dots or on InGaAsN quantum wells was made.
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Temperature characteristics of low-threshold high-efficiency quantum-dot lasers with the emission wavelength from 1.25 to 1.29 µm
Innokenty I. Novikov,M. V. Maksimov,Yu. M. Shernyakov,N. Yu. Gordeev,A. R. Kovsh,A. E. Zhukov,S. S. Mikhrin,Nikolai A. Maleev,A. P. Vasil’ev,V. M. Ustinov,Zh. I. Alferov,Nikolai N. Ledentsov,Dieter Bimberg +12 more
TL;DR: In this paper, the temperature behavior of low-threshold (the threshold current density is below 100 A/cm2) high-efficiency (differential quantum efficiency is as high as 88%) injection laser heterostructures is studied.
Journal ArticleDOI
Comprehensive Analysis of Electric Properties of Oxide-Confined Vertical-Cavity Surface-Emitting Lasers
TL;DR: In this article, a drift-diffusion model is developed and applied for carrier transport in a multilayer semiconductor laser heterostructure with a p-n junction, where the impact of interface grading in distributed Bragg reflectors (DBRs), modulation doping of the DBRs and surrounding layers of the quantum well as well as drastically material-dependent carrier mobilities and recombination constants are discussed.