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Nikolai N. Ledentsov

Researcher at Russian Academy of Sciences

Publications -  297
Citations -  10963

Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.

Papers
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Excitonic waveguiding and lasing in wide bandgap semiconductor

TL;DR: In this paper, an excitonic waveguiding effect has been proposed and realized for optoelectronics, which can be fabricated from the same matrix material (homojunction laser), and the effect is induced by nanoscale island-like insertions of narrow-gap material in a wide bandgap matrix (quantum dots).
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Structure of heterointerfaces and photoluminescence properties of GaAs/AlAs superlattices grown on (311)A and (311)B surfaces: Comparative analysis

TL;DR: The photoluminescence properties of type II GaAs/AlAs superlattices grown on the (311) surface were determined by their polarity in this paper, where it was found that the strong mixing between the Θ and X minima of the conduction band, occurring only in sublattice with strongly corrugated interfaces, allows generation of bright red luminescence at 650 nm up to room temperature.
Proceedings ArticleDOI

15 mW of continuous wave single transverse mode output power from planar 960 nm bottom-emitting VCSELs with multiple tapered oxide layers

TL;DR: In this article, a planar vertical cavity surface emitting laser with record 15 mW of continuous wave single transverse mode output power was reported, employing spatially displaced multiple aperture and deep oxidation layers in a bottom emitting geometry.
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Miniaturized Vertical‐Cavity Surface‐Emitting Laser Array with a Novel Electrode Design for High‐Speed, Low‐Noise, and High‐Brightness Performance

TL;DR: In this paper , a vertical-cavity surface-emitting laser (VCSEL) array with two separate electrodes for pure dc current injection and large ac signal modulation was demonstrated.
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Quantum dot semiconductor lasers of the 1.3 μm wavelength range with high temperature stability of the lasing wavelength (0.2 nm/K)

TL;DR: In this paper, it was shown that due to the use of such a waveguide structure, the temperature shift of the lasing wavelength is 0.2 nm/K, which is 2.5 times smaller than this shift in the lasers with quantum dots and with a conventional structure of the waveguide.