N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
More filters
Journal ArticleDOI
A temperature-stable semiconductor laser based on coupled waveguides
A. V. Savelyev,A. V. Savelyev,Innokenty I. Novikov,A. V. Chunareva,N. Yu. Gordeev,Mikhail V. Maximov,A. S. Payusov,E. M. Arakcheeva,V. A. Shchukin,Nikolai N. Ledentsov +9 more
TL;DR: In this paper, the design of a stripe semiconductor laser with a composite waveguide formed of two tunneling-coupled waveguides is considered, one of which is narrow and contains the active medium and the other of which forms the optical mode.
Journal ArticleDOI
Carbon acceptor luminescence in type-I GaAs/AlAs ultrathin-layer superlattices
TL;DR: In this paper, the binding energy of the acceptor in a type-I ultrathin-layer superlattices with well and barrier widths of 22.7 and 11.0 A was investigated.
Journal ArticleDOI
Study of Multilayer Structures with InAs Nanoobjects in a Silicon Matrix
V. N. Petrov,N. K. Polyakov,V. A. Egorov,G. E. Cirlin,Nikolai Zakharov,Peter Werner,V. M. Ustinov,D. V. Denisov,Nikolai N. Ledentsov,Zh. I. Alferov +9 more
TL;DR: In this paper, high resolution transmission electron microscopy was used to study MBE-grown multilayer structures with InAs quantum dots embedded in a crystalline silicon matrix, and it was shown that the silicon matrix can accommodate only a limited volume of InAs in the form of coherent clusters about 3 nm in size.
Journal ArticleDOI
Structural and Optical Properties of the Multilayer Structures Formed by Ge Sub-Critical Insertions in a Si Matrix
G. E. Cirlin,Nikolai Zakharov,Peter Werner,Alexander G. Makarov,A. F. Tsatsul'nikov,Victor M. Ustinov,Nikolai N. Ledentsov,V A Egorov,Ulrich Gösele +8 more
TL;DR: Si/Ge multilayer structures formed by the deposition of relatively small amounts of Ge layers (less then the critical thickness for 3D islands formation) are obtained by molecular beam epitaxy.
Proceedings ArticleDOI
Direct visualization of the in-plane leakage of high-order transverse modes in vertical-cavity surface-emitting lasers mediated by oxide-aperture engineering
TL;DR: In this paper, Xu et al. proposed a leaky VCSEL design that can be coupled to tilted modes in the periphery if the orthogonality between the core mode and the modes at the periphery is broken by the oxidation-induced optical field normalized distribution.