N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Single-Lobe Single-Wavelength Lasing in Ultrabroad-Area Vertical-Cavity Surface-Emitting Lasers Based on the Integrated Filter Concept
S. A. Blokhin,L. Ya. Karachinsky,Innokenty I. Novikov,N. Yu. Gordeev,A. V. Sakharov,Nikolai A. Maleev,A. G. Kuzmenkov,Y.M. Shernyakov,Mikhail V. Maximov,A. R. Kovsh,S. S. Mikhrin,V. A. Shchukin,Nikolai N. Ledentsov,V. M. Ustinov,Dieter Bimberg +14 more
TL;DR: In this paper, a broad-area vertical-cavity surface-emitting laser was realized and evaluated for the devices with and without the integrated absorber section, acting as a selective filter for the emission modes propagating at finite tilt angle with respect to the normal to the surface (F-AVCSEL).
Journal ArticleDOI
1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them
A. V. Sakharov,I. L. Krestnikov,Nikolai A. Maleev,A. R. Kovsh,A. E. Zhukov,A. F. Tsatsul’nikov,V. M. Ustinov,Nikolai N. Ledentsov,Dieter Bimberg,James A. Lott,Zh. I. Alferov +10 more
TL;DR: In this article, optical microcavities and active layers based on InGaAs/GaAs quantum dots MBE-grown on GaAs substrates were studied theoretically and experimentally.
Journal Article
Raman scattering by LA and TA phonons in GaAs/AlAs superlattices grown along the [111], [112], and [113] directions
Journal ArticleDOI
Tem Structural Characterization of Nm-Scale Islands in Highly Mismatched Systems
S. S. Ruvimov,S. S. Ruvimov,Zuzanna Liliental-Weber,Nikolai N. Ledentsov,Marius Grundmann,Dieter Bimberg,V.M. Ustinov,A. Yu. Egorov,P. S. Kop’ev,Zh. I. Alferov,Kurt Scheerschmidt,Ulrich Gösele +11 more
TL;DR: In this article, InAs islands were grown by MBE on GaAs substrates at different As-pressures and growth temperatures, and the stability of the equilibrium dot arrays to changing of growth conditions was studied by varying the deposition temperature, arsenic pressure or growth interruption time.
Proceedings ArticleDOI
Edge and surface emitting quantum dot lasers
Dieter Bimberg,Nikolai N. Ledentsov,Marius Grundmann,Frank Heinrichsdorff,V. M. Ustinov,Zh. I. Alferov,James A. Lott +6 more
TL;DR: In this article, a self-organized growth approach was used to achieve high internal and differential efficiencies for InGaAs-AlGaAs lasers based on vertically coupled QDs and RT 1 W continuous wave operation.