N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement
A. V. Sakharov,Sergei Ivanov,S. V. Sorokin,I. L. Krestnikov,B. V. Volovik,Nikolai N. Ledentsov,P. S. Kop’ev +6 more
TL;DR: In this article, it has been shown that lasing may be achieved in structures with submonolayer CdSe inclusions in a ZnMgSSe matrix at above-room temperatures without additional optical confinement of the active region by thick layers of lower refractive index.
Proceedings ArticleDOI
High-performance of single mode InAs/InGaAs/GaAs quantum dot lasers of 1.3-micron range
Daniil A. Livshits,A. R. Kovsh,Nikolay A. Maleev,Alexey E. Zhukov,Victor M. Ustinov,Nikolai N. Ledentsov,Zhores I. Alferov,Dieter Bimberg,Gray Lin,Jim Y. Chi +9 more
TL;DR: In this article, the authors have demonstrated that using of high number of QDs stacks grown under proper conditions by MBE is an effective way to considerably increase the optical gain of QD lasers.
Journal ArticleDOI
Photoluminescence of localized excitons in InGan quantum dots
S. O. Usov,A. F. Tsatsul’nikov,V. V. Lundin,A. V. Sakharov,E. E. Zavarin,Nikolai N. Ledentsov +5 more
TL;DR: In this article, the authors studied the photoluminescence spectra of samples with ultrathin InGaN layers embedded in AlGaN and GaN matrices in the temperature range of 80 to 300 K.
Journal ArticleDOI
Lasing wavelength of quantum dot heterostructures controlled within the 1.3–0.85 μm range by means of high-temperature annealing
Ekaterina V. Nikitina,A. E. Zhukov,A. P. Vasil’ev,Elizaveta Semenova,A. G. Gladyshev,N. V. Kryzhanovskaya,M. V. Maksimov,Yu. M. Shernyakov,V. M. Ustinov,Nikolai N. Ledentsov +9 more
TL;DR: In this paper, the effect of high-temperature annealing on the properties of a laser heterostructure with InAs quantum dots in AlAs/GaAs superlattice was studied.
Journal ArticleDOI
Quantum-dot injection heterolaser with 3.3 W output power
A. R. Kovsh,D. A. Livshits,A. E. Zhukov,A. Yu. Egorov,M. V. Maksimov,V. M. Ustinov,I. S. Tarasov,Nikolai N. Ledentsov,P. S. Kop’ev,Zh. I. Alferov,Dieter Bimberg +10 more
TL;DR: The ground state of composite vertically coupled InAlAs/InGaAs quantum dots in an AlGaAs matrix with a room temperature output power of 3.3W at both mirrors was achieved in this article.