N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
Papers
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Journal ArticleDOI
Application of self-organized quantum dots to edge emitting and vertical cavity lasers
Dieter Bimberg,Nikolai N. Ledentsov,Marius Grundmann,Frank Heinrichsdorff,V. M. Ustinov,P. S. Kop’ev,Mikhail V. Maximov,Zh. I. Alferov,James A. Lott +8 more
TL;DR: In this paper, self-organised quantum dots (QDs) are used as active media of edge emitting and vertical cavity lasers, and threshold current densities at room temperature (RT) of 60 A/cm 2 for edge emitting lasers are measured in four side cleaved geometry.
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Effect of hole-localization mechanisms on photoluminescence spectra of two-dimensional-electron-gas systems.
TL;DR: On observe que the singularite de limite de Fermi en luminescence n'apparait que si the localisation des trous photogeneres conduit a des centres charges positivement.
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Formation of InSb quantum dots in a GaSb matrix
A. F. Tsatsul’nikov,Sergei Ivanov,P. S. Kop’ev,A. K. Kryganovskii,Nikolai N. Ledentsov,Mikhail V. Maximov,B. Ya. Meltser,P. V. Nekludov,Alexandra Suvorova,A. N. Titkov,B. V. Volovik,Marius Grundmann,Dieter Bimberg,Zh. I. Alferov +13 more
TL;DR: InSb nanoislands in a GaSb (100) matrix have been fabricated and their structural and luminescence properties have been studied in this paper, where the deposition of ∼1.7 monolayers of InSb in a G100 matrix has been found by transmission electron microscopy to result in a 2D-3D growth mode transition and formation of small In-Sb quantum dots (QDs) with lateral sizes of ∼10 nm.
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The outlook for the development of radiation sources in the middle-IR range based on the intraband transitions between the energy levels of charge carriers in injection laser heterostructures with quantum dots and wells
L. E. Vorob’ev,D. A. Firsov,Vadim A. Shalygin,V.N. Tulupenko,Nikolai N. Ledentsov,Petr S. Kop'ev,V. M. Ustinov,Yu. M. Shernyakov,Zhores I. Alferov +8 more
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Resonant spin-flip Raman scattering and localized exciton luminescence in submonolayer InAs-GaAs structures
Andrei Sirenko,T. Ruf,Nikolai N. Ledentsov,A. Yu. Egorov,Petr S. Kop'ev,V. M. Ustinov,A. E. Zhukov +6 more
TL;DR: In this paper, the authors report on efficient resonant spin-flip Raman scattering due to localized heavy-hole excitons in single submonolayer InAs insertions in a GaAs matrix.